Energy levels due to n-type'GAMA'-doping in silicon (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid State Communications
- Volume/Número/Paginação/Ano: v.93, p.469-9, 1995
-
ABNT
SCOLFARO, L M R et al. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications, v. 93, p. 469-9, 1995Tradução . . Acesso em: 14 mar. 2026. -
APA
Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1995). Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications, 93, 469-9. -
NLM
Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications. 1995 ;93 469-9.[citado 2026 mar. 14 ] -
Vancouver
Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications. 1995 ;93 469-9.[citado 2026 mar. 14 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
