Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC' (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.80, n.11, p.6322, 1996
-
ABNT
TELES, L. K. et al. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, v. 80, n. 11, p. 6322, 1996Tradução . . Acesso em: 14 mar. 2026. -
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, 80( 11), 6322. -
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2026 mar. 14 ] -
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2026 mar. 14 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
