Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC' (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v.80, n.11, p.6322, 1996
-
ABNT
TELES, L. K. et al. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, v. 80, n. 11, p. 6322, 1996Tradução . . Acesso em: 19 abr. 2024. -
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, 80( 11), 6322. -
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2024 abr. 19 ] -
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2024 abr. 19 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
