Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1088/0268-1242/21/7/003
- Subjects: MATÉRIA CONDENSADA; ESPALHAMENTO
- Language: Inglês
- Imprenta:
- Source:
- Título: Semiconductor Science and Technology
- ISSN: 0268-1242
- Volume/Número/Paginação/Ano: v. 21, n. 7, p. 846-851, 2006
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 23 jan. 2026. -
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003 -
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003 -
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003 - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
Informações sobre o DOI: 10.1088/0268-1242/21/7/003 (Fonte: oaDOI API)
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