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Artigo de periodico
Study of ISFET for KCl sensing (2024)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO, SENSORES BIOMÉDICOS
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ABNT
DUARTE, Pedro Henrique et al. Study of ISFET for KCl sensing. Solid State Electronics, v. 219, p. 1-5, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2024.108974. Acesso em: 15 set. 2024.
APA
Duarte, P. H., Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2024). Study of ISFET for KCl sensing. Solid State Electronics, 219, 1-5. doi:10.1016/j.sse.2024.108974
NLM
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Vancouver
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Artigo de periodico
An enzymatic glucose biosensor using the BESOI MOSFET (2024)
Yojo, Leonardo Shimizu; Rangel, R C; Duarte, Pedro Henrique; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: GLICOSE, DRENAGEM, TRANSISTORES
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ABNT
YOJO, Leonardo Shimizu et al. An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, v. 211, n. Ja 2024, p. 1-6, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108830. Acesso em: 15 set. 2024.
APA
Yojo, L. S., Rangel, R. C., Duarte, P. H., Sasaki, K. R. A., & Martino, J. A. (2024). An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, 211( Ja 2024), 1-6. doi:10.1016/j.sse.2023.108830
NLM
Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108830
Vancouver
Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108830
Artigo de periodico
Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors (2024)
Colucci, Renan ; Feitosa, Bianca de Andrade ; Faria, Gregório Couto
Source: Advanced Electronic Materials. Unidades: IFSC, EESC
Subjects: TRANSISTORES, MATERIAIS ELETRÔNICOS, ELETROQUÍMICA ORGÂNICA, POLÍMEROS (QUÍMICA ORGÂNICA)
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ABNT
COLUCCI, Renan e FEITOSA, Bianca de Andrade e FARIA, Gregório Couto. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors. Advanced Electronic Materials, v. 10, n. 2, p. 2300235-1-2300235-8 + supporting information, 2024Tradução . . Disponível em: https://doi.org/10.1002/aelm.202300235. Acesso em: 15 set. 2024.
APA
Colucci, R., Feitosa, B. de A., & Faria, G. C. (2024). Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors. Advanced Electronic Materials, 10( 2), 2300235-1-2300235-8 + supporting information. doi:10.1002/aelm.202300235
NLM
Colucci R, Feitosa B de A, Faria GC. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors [Internet]. Advanced Electronic Materials. 2024 ; 10( 2): 2300235-1-2300235-8 + supporting information.[citado 2024 set. 15 ] Available from: https://doi.org/10.1002/aelm.202300235
Vancouver
Colucci R, Feitosa B de A, Faria GC. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors [Internet]. Advanced Electronic Materials. 2024 ; 10( 2): 2300235-1-2300235-8 + supporting information.[citado 2024 set. 15 ] Available from: https://doi.org/10.1002/aelm.202300235
Artigo de periodico
Guidelines on measuring volumetric capacitance in organic electrochemical transistors (2024)
Luginieski, Marcos ; Torres, Bruno Bassi Millan ; Faria, Gregório Couto
Source: ACS Applied Electronic Materials. Unidade: IFSC
Subjects: ELETROQUÍMICA, TRANSISTORES, POLÍMEROS (MATERIAIS)
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ABNT
LUGINIESKI, Marcos e TORRES, Bruno Bassi Millan e FARIA, Gregório Couto. Guidelines on measuring volumetric capacitance in organic electrochemical transistors. ACS Applied Electronic Materials, v. 6, n. 4, p. 2225-2231 + supporting information: S1-S10, 2024Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.3c01673. Acesso em: 15 set. 2024.
APA
Luginieski, M., Torres, B. B. M., & Faria, G. C. (2024). Guidelines on measuring volumetric capacitance in organic electrochemical transistors. ACS Applied Electronic Materials, 6( 4), 2225-2231 + supporting information: S1-S10. doi:10.1021/acsaelm.3c01673
NLM
Luginieski M, Torres BBM, Faria GC. Guidelines on measuring volumetric capacitance in organic electrochemical transistors [Internet]. ACS Applied Electronic Materials. 2024 ; 6( 4): 2225-2231 + supporting information: S1-S10.[citado 2024 set. 15 ] Available from: https://doi.org/10.1021/acsaelm.3c01673
Vancouver
Luginieski M, Torres BBM, Faria GC. Guidelines on measuring volumetric capacitance in organic electrochemical transistors [Internet]. ACS Applied Electronic Materials. 2024 ; 6( 4): 2225-2231 + supporting information: S1-S10.[citado 2024 set. 15 ] Available from: https://doi.org/10.1021/acsaelm.3c01673
Artigo de periodico
Experimental study of MISHEMT from 450 K down to 200 K for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, SEMICONDUTORES
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ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 15 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Artigo de periodico
ISFET fabrication and characterization for hydrogen peroxide sensing (2023)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Katia Regina Akemi; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SOLUÇÕES
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ABNT
DUARTE, Pedro Henrique et al. ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.646. Acesso em: 15 set. 2024.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2023). ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, 18( 1), 1-4. doi:10.29292/jics.v18i1.646
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Artigo de periodico
Cu-modified electrolyte-gated transistors based on reduced graphene oxide (2023)
Ferreira, Rafael Cintra Hensel ; Comisso, Nicola ; Musiani, Marco ; Sedona, Francesco ; Sambi, Mauro ; Cester, Andrea ; Lago, Nicolò ; Casalini, Stefano
Source: Journal of Materials Chemistry C. Unidade: IFSC
Subjects: COBRE, TRANSISTORES, ELETRÔNICA
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ABNT
FERREIRA, Rafael Cintra Hensel et al. Cu-modified electrolyte-gated transistors based on reduced graphene oxide. Journal of Materials Chemistry C, v. 11, n. 26, p. 8876-8884 + supplementary information, 2023Tradução . . Disponível em: https://doi.org/10.1039/d3tc00596h. Acesso em: 15 set. 2024.
APA
Ferreira, R. C. H., Comisso, N., Musiani, M., Sedona, F., Sambi, M., Cester, A., et al. (2023). Cu-modified electrolyte-gated transistors based on reduced graphene oxide. Journal of Materials Chemistry C, 11( 26), 8876-8884 + supplementary information. doi:10.1039/d3tc00596h
NLM
Ferreira RCH, Comisso N, Musiani M, Sedona F, Sambi M, Cester A, Lago N, Casalini S. Cu-modified electrolyte-gated transistors based on reduced graphene oxide [Internet]. Journal of Materials Chemistry C. 2023 ; 11( 26): 8876-8884 + supplementary information.[citado 2024 set. 15 ] Available from: https://doi.org/10.1039/d3tc00596h
Vancouver
Ferreira RCH, Comisso N, Musiani M, Sedona F, Sambi M, Cester A, Lago N, Casalini S. Cu-modified electrolyte-gated transistors based on reduced graphene oxide [Internet]. Journal of Materials Chemistry C. 2023 ; 11( 26): 8876-8884 + supplementary information.[citado 2024 set. 15 ] Available from: https://doi.org/10.1039/d3tc00596h
Artigo de periodico
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications (2023)
Silva, V C P; Martino, João Antonio ; Simoen, Eddy ; Veloso, Anabela; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA, NANOTECNOLOGIA, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
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ABNT
SILVA, V C P et al. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, v. 208, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108729. Acesso em: 15 set. 2024.
APA
Silva, V. C. P., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2023). Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, 208, 1-5. doi:10.1016/j.sse.2023.108729
NLM
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Vancouver
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Artigo de periodico
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)
Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
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ABNT
SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 15 set. 2024.
APA
Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611
NLM
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Vancouver
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Artigo de periodico
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 15 set. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84
NLM
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 set. 15 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 set. 15 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Artigo de periodico
Experimental study of MISHEMT from 450k down to 200 k for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, TEMPERATURA
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ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 15 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Artigo de periodico
MISHEMT intrinsic voltage gain under multiple channel output characteristics (2023)
Canales, Bruno Godoy; Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
CANALES, Bruno Godoy et al. MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, v. 38, n. 11, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/acfa1f. Acesso em: 15 set. 2024.
APA
Canales, B. G., Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, 38( 11), 1-6. doi:10.1088/1361-6641/acfa1f
NLM
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Vancouver
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Artigo de periodico
Distinctive behavior of field-effect and redox electrolyte-gated organic transistors (2023)
Coutinho, Douglas José ; Feitosa, Bianca de Andrade ; Barbosa, Henrique Frulani de Paula ; Colucci, Renan ; Torres, Bruno Bassi Millan ; Faria, Gregório Couto
Source: Journal of Physical Chemistry C. Unidades: IFSC, EESC
Subjects: ELETROQUÍMICA ORGÂNICA, POLÍMEROS (QUÍMICA ORGÂNICA), TRANSISTORES
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ABNT
COUTINHO, Douglas José et al. Distinctive behavior of field-effect and redox electrolyte-gated organic transistors. Journal of Physical Chemistry C, v. 127, n. 50, p. 24443-24451 + supporting information: S1-S3, 2023Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.3c06261. Acesso em: 15 set. 2024.
APA
Coutinho, D. J., Feitosa, B. de A., Barbosa, H. F. de P., Colucci, R., Torres, B. B. M., & Faria, G. C. (2023). Distinctive behavior of field-effect and redox electrolyte-gated organic transistors. Journal of Physical Chemistry C, 127( 50), 24443-24451 + supporting information: S1-S3. doi:10.1021/acs.jpcc.3c06261
NLM
Coutinho DJ, Feitosa B de A, Barbosa HF de P, Colucci R, Torres BBM, Faria GC. Distinctive behavior of field-effect and redox electrolyte-gated organic transistors [Internet]. Journal of Physical Chemistry C. 2023 ; 127( 50): 24443-24451 + supporting information: S1-S3.[citado 2024 set. 15 ] Available from: https://doi.org/10.1021/acs.jpcc.3c06261
Vancouver
Coutinho DJ, Feitosa B de A, Barbosa HF de P, Colucci R, Torres BBM, Faria GC. Distinctive behavior of field-effect and redox electrolyte-gated organic transistors [Internet]. Journal of Physical Chemistry C. 2023 ; 127( 50): 24443-24451 + supporting information: S1-S3.[citado 2024 set. 15 ] Available from: https://doi.org/10.1021/acs.jpcc.3c06261
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 15 set. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Artigo de periodico
Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data (2022)
Toledo, Rodrigo do Nascimento; Silva, Wenita de Lima; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CONDUTIVIDADE ELÉTRICA
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ABNT
TOLEDO, Rodrigo do Nascimento et al. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, v. 194, p. 1-4, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2022.108328. Acesso em: 15 set. 2024.
APA
Toledo, R. do N., Silva, W. de L., Gonçalez Filho, W., Nogueira, A. de M., Martino, J. A., & Agopian, P. G. D. (2022). Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, 194, 1-4. doi:10.1016/j.sse.2022.108328
NLM
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Vancouver
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Artigo de periodico
Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C (2022)
Sousa, Julia Cristina Soares; Perina, Welder F; Rangel, Roberto; Simoen, Eddy ; Veloso, Anabela; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: NANOTECNOLOGIA, CIRCUITOS ANALÓGICOS, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUSA, Julia Cristina Soares et al. Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C. Solid State Electronics, v. 189, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2022.108238. Acesso em: 15 set. 2024.
APA
Sousa, J. C. S., Perina, W. F., Rangel, R., Simoen, E., Veloso, A., Martino, J. A., & Agopian, P. G. D. (2022). Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C. Solid State Electronics, 189, 1-9. doi:10.1016/j.sse.2022.108238
NLM
Sousa JCS, Perina WF, Rangel R, Simoen E, Veloso A, Martino JA, Agopian PGD. Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C [Internet]. Solid State Electronics. 2022 ;189 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2022.108238
Vancouver
Sousa JCS, Perina WF, Rangel R, Simoen E, Veloso A, Martino JA, Agopian PGD. Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C [Internet]. Solid State Electronics. 2022 ;189 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2022.108238
Artigo de periodico
Reconfigurable SOI-MOSFET: past, present and future applications (2022)
Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RANGEL, Ricardo Cardoso e SASAKI, Kátia Regina Akemi e MARTINO, João Antonio. Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.626. Acesso em: 15 set. 2024.
APA
Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2022). Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, 17( 2), 1-9. doi:10.29292/jics.v17i2.626
NLM
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Vancouver
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Artigo de periodico
Unrevealing the interaction between O2 molecules and poly(3-hexylthiophene-2,5-diyl) (P3HT) (2022)
Fernandes, Marcelo; Wrasse, Ernesto Osvaldo; Koyama, Caio Junji Kawata; Günther, Florian Steffen ; Coutinho, Douglas José
Source: RSC Advances. Unidade: IFSC
Subjects: MATERIAIS ELETRÔNICOS, DIODOS, TRANSISTORES, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDES, Marcelo et al. Unrevealing the interaction between O2 molecules and poly(3-hexylthiophene-2,5-diyl) (P3HT). RSC Advances, v. 2022, n. 29, p. 18578-18584, 2022Tradução . . Disponível em: https://doi.org/10.1039/d2ra02969c. Acesso em: 15 set. 2024.
APA
Fernandes, M., Wrasse, E. O., Koyama, C. J. K., Günther, F. S., & Coutinho, D. J. (2022). Unrevealing the interaction between O2 molecules and poly(3-hexylthiophene-2,5-diyl) (P3HT). RSC Advances, 2022( 29), 18578-18584. doi:10.1039/d2ra02969c
NLM
Fernandes M, Wrasse EO, Koyama CJK, Günther FS, Coutinho DJ. Unrevealing the interaction between O2 molecules and poly(3-hexylthiophene-2,5-diyl) (P3HT) [Internet]. RSC Advances. 2022 ; 2022( 29): 18578-18584.[citado 2024 set. 15 ] Available from: https://doi.org/10.1039/d2ra02969c
Vancouver
Fernandes M, Wrasse EO, Koyama CJK, Günther FS, Coutinho DJ. Unrevealing the interaction between O2 molecules and poly(3-hexylthiophene-2,5-diyl) (P3HT) [Internet]. RSC Advances. 2022 ; 2022( 29): 18578-18584.[citado 2024 set. 15 ] Available from: https://doi.org/10.1039/d2ra02969c
Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 15 set. 2024.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Artigo de periodico
Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications (2022)
Simoen, Eddy ; Coelho, Carlos Henrique Santos; Silva, Vanessa Cristina Pereira da; Martino, João Antonio ; Agopian, Paula Ghedini Der ; Oliveira, Alberto; Cretu, Bogdan; Veloso, Anabela
Source: Journal of Integrated Circuits and Systems. Unidades: EP, EESC
Subjects: TRANSISTORES, NANOELETRÔNICA, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.617. Acesso em: 15 set. 2024.
APA
Simoen, E., Coelho, C. H. S., Silva, V. C. P. da, Martino, J. A., Agopian, P. G. D., Oliveira, A., et al. (2022). Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications. Journal of Integrated Circuits and Systems, 17( 2), 1-9. doi:10.29292/jics.v17i2.617
NLM
Simoen E, Coelho CHS, Silva VCP da, Martino JA, Agopian PGD, Oliveira A, Cretu B, Veloso A. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.617
Vancouver
Simoen E, Coelho CHS, Silva VCP da, Martino JA, Agopian PGD, Oliveira A, Cretu B, Veloso A. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2024 set. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.617

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