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Artigo de periodico
High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction (2024)
Alzeidan, Ahmad ; Cantalice, Tiago Fernandes de ; Sautter, K E; Vallejo, K D; Simmonds, P J; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
ALZEIDAN, Ahmad et al. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, v. 374, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2024.115464. Acesso em: 03 nov. 2025.
APA
Alzeidan, A., Cantalice, T. F. de, Sautter, K. E., Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2024). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, 374. doi:10.1016/j.sna.2024.115464
NLM
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Sensors and Actuators A: Physical. 2024 ; 374[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.sna.2024.115464
Vancouver
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Sensors and Actuators A: Physical. 2024 ; 374[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.sna.2024.115464
Artigo de periodico
Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)
Huang, T.-Y. ; Borrely, T ; Yang, Y.-C. ; Alzeidan, A. ; Jacobsen, G. M. ; Teodoro, M. D. ; Quivy, Alain André ; Goldman, R. S.
Source: Applied Physics Letters. Unidade: IF
Subjects: POÇOS QUÂNTICOS, CÉLULAS SOLARES, FOTOLUMINESCÊNCIA, LASER DO ESTADO SÓLIDO
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HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 03 nov. 2025.
APA
Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815
NLM
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 03 ] Available from: https://doi.org/10.1063/5.0219815
Vancouver
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 03 ] Available from: https://doi.org/10.1063/5.0219815
Artigo de periodico
Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure (2023)
Izquierdo, Jose Enrique Eirez ; Cavallari, Marco Roberto ; García, Dennis Cabrera ; Fonseca, Fernando Josepetti ; Quivy, Alain André
Source: Sensors. Unidades: EP, IF
Subjects: SEMICONDUTORES, FILMES FINOS, ESPECTROSCOPIA
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IZQUIERDO, Jose Enrique Eirez et al. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, v. 23, n. 18, 2023Tradução . . Disponível em: https://doi.org/10.3390/s23187981. Acesso em: 03 nov. 2025.
APA
Izquierdo, J. E. E., Cavallari, M. R., García, D. C., Fonseca, F. J., & Quivy, A. A. (2023). Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, 23( 18). doi:10.3390/s23187981
NLM
Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 03 ] Available from: https://doi.org/10.3390/s23187981
Vancouver
Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 03 ] Available from: https://doi.org/10.3390/s23187981
Trabalho de evento
On the importance of atom probe tomography for the development of new nanoscale devices (2022)
Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André
Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Subjects: TOMOGRAFIA, SEMICONDUTORES
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SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 03 nov. 2025.
APA
Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039
NLM
Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 03 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
Vancouver
Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 03 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
Trabalho de evento-resumo
INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS (2022)
Alzeidan, Ahmad ; Cantalice, Tiago Fernandes de ; Quivy, Alain André
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Subjects: FOTODETECTORES, ARSÊNIO
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ALZEIDAN, Ahmad e CANTALICE, Tiago Fernandes de e QUIVY, Alain André. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 03 nov. 2025.
APA
Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2022). INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2025 nov. 03 ]
Vancouver
Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2025 nov. 03 ]
Artigo de periodico
Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots (2022)
Gajjela, Raja Sekhar Reddy ; Alzeidan, Ahmad ; Curbelo, Victor Manuel Orlando ; Quivy, Alain André ; koenraad, Paul M
Source: Physical Review Materials. Unidade: IF
Assunto: MICROSCOPIA DE FORÇA ATÔMICA
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GAJJELA, Raja Sekhar Reddy et al. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, v. 6, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.114604. Acesso em: 03 nov. 2025.
APA
Gajjela, R. S. R., Alzeidan, A., Curbelo, V. M. O., Quivy, A. A., & koenraad, P. M. (2022). Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, 6. doi:10.1103/PhysRevMaterials.6.114604
NLM
Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604
Vancouver
Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604
Artigo de periodico
Evidence of weak strain field in InAs/GaAs submonolayer quantum dots (2022)
Cantalice, Tiago Fernandes de ; Alzeidan, Ahmad ; Jacobsen, G M ; Santos, Thales Borrely dos ; Teodoro, M D ; Quivy, Alain André
Source: Micro and Nanostructures. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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CANTALICE, Tiago Fernandes de et al. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, v. 172, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2022.207449. Acesso em: 03 nov. 2025.
APA
Cantalice, T. F. de, Alzeidan, A., Jacobsen, G. M., Santos, T. B. dos, Teodoro, M. D., & Quivy, A. A. (2022). Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, 172. doi:10.1016/j.micrna.2022.207449
NLM
Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449
Vancouver
Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449
Trabalho de evento-resumo
ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL (2022)
Santos, Thales Borrely dos ; Alzeidan, Ahmad ; Quivy, Alain André ; Jacobsen, Gabriel Marques ; Teodoro, M D ; Gajjela, Raja Sekhar Reddy ; Hendriks, A L; Koenraad, P M
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: ÓPTICA ELETRÔNICA
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SANTOS, Thales Borrely dos et al. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 03 nov. 2025.
APA
Santos, T. B. dos, Alzeidan, A., Quivy, A. A., Jacobsen, G. M., Teodoro, M. D., Gajjela, R. S. R., et al. (2022). ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2025 nov. 03 ]
Vancouver
Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2025 nov. 03 ]
Artigo de periodico
Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors (2022)
Alzeidan, A.; Cantalice, T. F.; Vallejo, K. D.; Gajjela, R. S. R.; Hendriks, A. L.; Simmonds, P. J.; Koenraad, P. M.; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Subjects: FÍSICA MODERNA, NANOTECNOLOGIA, MICROSCOPIA DE FORÇA ATÔMICA, RADIAÇÃO INFRAVERMELHA, FOTODETECTORES
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ALZEIDAN, A. et al. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, v. 334, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2021.113357. Acesso em: 03 nov. 2025.
APA
Alzeidan, A., Cantalice, T. F., Vallejo, K. D., Gajjela, R. S. R., Hendriks, A. L., Simmonds, P. J., et al. (2022). Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, 334. doi:10.1016/j.sna.2021.113357
NLM
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Vancouver
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Trabalho de evento-anais periodico
Response testing of Schottky-barrier GaAs detectors with alpha particles (2022)
Pereira, M S; Aguiar, Vitor Ângelo Paulino de ; Alberton, Saulo Gabriel Pereira Nascimento ; Quivy, Alain André
Source: Journal of Physics: Conference Series. Conference titles: Brazilian Workshop on Nuclear Physics. Unidade: IF
Assunto: PARTÍCULAS (FÍSICA NUCLEAR)
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PEREIRA, M S et al. Response testing of Schottky-barrier GaAs detectors with alpha particles. Journal of Physics: Conference Series. Bristol: IOP Publishing. Disponível em: https://doi.org/10.1088/1742-6596/2340/1/012050. Acesso em: 03 nov. 2025. , 2022
APA
Pereira, M. S., Aguiar, V. Â. P. de, Alberton, S. G. P. N., & Quivy, A. A. (2022). Response testing of Schottky-barrier GaAs detectors with alpha particles. Journal of Physics: Conference Series. Bristol: IOP Publishing. doi:10.1088/1742-6596/2340/1/012050
NLM
Pereira MS, Aguiar VÂP de, Alberton SGPN, Quivy AA. Response testing of Schottky-barrier GaAs detectors with alpha particles [Internet]. Journal of Physics: Conference Series. 2022 ; 2340[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/2340/1/012050
Vancouver
Pereira MS, Aguiar VÂP de, Alberton SGPN, Quivy AA. Response testing of Schottky-barrier GaAs detectors with alpha particles [Internet]. Journal of Physics: Conference Series. 2022 ; 2340[citado 2025 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/2340/1/012050
Trabalho de evento-resumo
IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY (2022)
Curbelo, Victor Manuel Orlando ; Alzeidan, Ahmad ; Quivy, Alain André
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 03 nov. 2025.
APA
Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2025 nov. 03 ]
Vancouver
Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2025 nov. 03 ]
Artigo de periodico
A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry (2021)
Malafronte, A. A.; Petri, A. R.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Maidana, Nora Lia ; Mangiarotti, Alessio ; Martins, Marcos ; Quivy, Alain André ; Vanin, Vito
Source: Radiation Physics and Chemistry. Unidades: IF, IPEN
Subjects: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO
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MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 03 nov. 2025.
APA
Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103
NLM
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Vancouver
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2025 nov. 03 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Trabalho de evento-resumo
Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots (2020)
Cantalice, Tiago Fernandes de; Al-Zeidan, Ahmad; Quivy, Alain André
Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: MICROSCOPIA ELETRÔNICA DE VARREDURA
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CANTALICE, Tiago Fernandes de e AL-ZEIDAN, Ahmad e QUIVY, Alain André. Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots. 2020, Anais.. São Paulo: SBF-Sociedade Brasileira de Física, 2020. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0852-1.pdf. Acesso em: 03 nov. 2025.
APA
Cantalice, T. F. de, Al-Zeidan, A., & Quivy, A. A. (2020). Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots. In . São Paulo: SBF-Sociedade Brasileira de Física. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0852-1.pdf
NLM
Cantalice TF de, Al-Zeidan A, Quivy AA. Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0852-1.pdf
Vancouver
Cantalice TF de, Al-Zeidan A, Quivy AA. Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0852-1.pdf
Relatorio tecnico
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
Gajjela, R.S.R. ; Hendriks, A. L.; Koenraad, P M; Alzeidan, Ahmad; Cantalice, Tiago Fernandes de; Quivy, Alain André
Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO
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GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2008.11711.pdf. Acesso em: 03 nov. 2025. , 2020
APA
Gajjela, R. S. R., Hendriks, A. L., Koenraad, P. M., Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2008.11711.pdf
NLM
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/2008.11711.pdf
Vancouver
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/2008.11711.pdf
Trabalho de evento-resumo
The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells (2020)
Santos, Thales Borrely dos ; Lima, Marcelo Delmondes de; Fernandes, Paulo Henrique Diniz; Al-Zeidan, Ahmad; Cantalice, Tiago Fernandes de; Quivy, Alain André
Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: CÉLULAS SOLARES
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ABNT
SANTOS, Thales Borrely dos et al. The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells. 2020, Anais.. São Paulo: SBF-Sociedade Brasileira de Física, 2020. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0825-1.pdf. Acesso em: 03 nov. 2025.
APA
Santos, T. B. dos, Lima, M. D. de, Fernandes, P. H. D., Al-Zeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2020). The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells. In . São Paulo: SBF-Sociedade Brasileira de Física. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0825-1.pdf
NLM
Santos TB dos, Lima MD de, Fernandes PHD, Al-Zeidan A, Cantalice TF de, Quivy AA. The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0825-1.pdf
Vancouver
Santos TB dos, Lima MD de, Fernandes PHD, Al-Zeidan A, Cantalice TF de, Quivy AA. The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0825-1.pdf
Relatorio tecnico
Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2020)
Morelhão, Sergio Luiz ; Avanci, L H; Freitas, R; Quivy, Alain André
Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA
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ABNT
MORELHÃO, Sergio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. . Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0412254.pdf. Acesso em: 03 nov. 2025. , 2020
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2020). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0412254.pdf
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf
Artigo de periodico
Organic Dielectric Films for Flexible Transistors as Gas Sensors (2020)
García, Dennis Cabrera; Eirez Izquierdo, José Enrique ; Cavallari, Marco Roberto ; Quivy, Alain André; Fonseca, Fernando Josepetti
Source: Journal of Integrated Circuits and Systems. Unidades: IF, EP
Subjects: ÓPTICA ELETRÔNICA, TRANSISTORES, POLÍMEROS (MATERIAIS), FILMES FINOS, CAPACITORES, DIELÉTRICOS, SEMICONDUTORES
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ABNT
GARCÍA, Dennis Cabrera et al. Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, v. 15, n. 2, 2020Tradução . . Disponível em: https://doi.org/10.29292/jics.v15i2.170. Acesso em: 03 nov. 2025.
APA
García, D. C., Eirez Izquierdo, J. E., Cavallari, M. R., Quivy, A. A., & Fonseca, F. J. (2020). Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, 15( 2). doi:10.29292/jics.v15i2.170
NLM
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 03 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Vancouver
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 03 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Artigo de periodico
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
Gajjela, R.S.R. ; Hendriks, A. L.; Cantalice, T. F.; Quivy, Alain André ; koenraad, Paul
Source: Physical Review Materials. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO
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ABNT
GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, v. 4, n. 11, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.114601. Acesso em: 03 nov. 2025.
APA
Gajjela, R. S. R., Hendriks, A. L., Cantalice, T. F., Quivy, A. A., & koenraad, P. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, 4( 11). doi:10.1103/PhysRevMaterials.4.114601
NLM
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601
Vancouver
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601
Relatorio tecnico
Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields (2020)
Oliveira, R F; Henriques, André Bohomoletz ; Lamas, Tomás Erikson; Quivy, Alain André ; Abramof, E
Unidade: IF
Subjects: MATÉRIA CONDENSADA, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, R F et al. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0404254.pdf. Acesso em: 03 nov. 2025. , 2020
APA
Oliveira, R. F., Henriques, A. B., Lamas, T. E., Quivy, A. A., & Abramof, E. (2020). Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0404254.pdf
NLM
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0404254.pdf
Vancouver
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0404254.pdf
Relatorio tecnico
On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system (2020)
Avanci, L H; Remedios, C M R; Quivy, Alain André ; Morelhão, Sergio Luiz
Unidade: IF
Assunto: DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AVANCI, L H et al. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0411508.pdf. Acesso em: 03 nov. 2025. , 2020
APA
Avanci, L. H., Remedios, C. M. R., Quivy, A. A., & Morelhão, S. L. (2020). On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0411508.pdf
NLM
Avanci LH, Remedios CMR, Quivy AA, Morelhão SL. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0411508.pdf
Vancouver
Avanci LH, Remedios CMR, Quivy AA, Morelhão SL. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system [Internet]. 2020 ;[citado 2025 nov. 03 ] Available from: https://arxiv.org/pdf/cond-mat/0411508.pdf

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