High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction (2024)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- DOI: 10.1016/j.sna.2024.115464
- Assunto: FOTODETECTORES
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Sensors and Actuators A: Physical
- Volume/Número/Paginação/Ano: v. 374, 115464, 2024
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ALZEIDAN, Ahmad et al. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, v. 374, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2024.115464. Acesso em: 30 dez. 2025. -
APA
Alzeidan, A., Cantalice, T. F. de, Sautter, K. E., Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2024). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, 374. doi:10.1016/j.sna.2024.115464 -
NLM
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Sensors and Actuators A: Physical. 2024 ; 374[citado 2025 dez. 30 ] Available from: https://doi.org/10.1016/j.sna.2024.115464 -
Vancouver
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Sensors and Actuators A: Physical. 2024 ; 374[citado 2025 dez. 30 ] Available from: https://doi.org/10.1016/j.sna.2024.115464 - Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS
- Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
- Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
- In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots
- Influência da segregação dos átomos de Índio sobre o desempenho de fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamadas de InAs/GaAs
Informações sobre o DOI: 10.1016/j.sna.2024.115464 (Fonte: oaDOI API)
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