Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; FÍSICA MODERNA; MICROSCOPIA DE FORÇA ATÔMICA; SUPERFÍCIES; ÍNDIO (ELEMENTO QUÍMICO); ARSÊNIO
- Agências de fomento:
- Language: Inglês
- Imprenta:
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ABNT
GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2008.11711.pdf. Acesso em: 30 dez. 2025. , 2020 -
APA
Gajjela, R. S. R., Hendriks, A. L., Koenraad, P. M., Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2008.11711.pdf -
NLM
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2025 dez. 30 ] Available from: https://arxiv.org/pdf/2008.11711.pdf -
Vancouver
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2025 dez. 30 ] Available from: https://arxiv.org/pdf/2008.11711.pdf - High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
- INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS
- Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
- Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
- In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots
- Influência da segregação dos átomos de Índio sobre o desempenho de fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamadas de InAs/GaAs
- Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction
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