Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation (2026)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; URAHATA, SÉRGIO MINORU - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- DOI: https://doi.org/10.1016/j.micrna.2026.208567
- Assunto: SEMICONDUTORES
- Keywords: InAs/GaAs; SEGREGATION; SIMULATIONS; STRAIN; QUANTUM DOTS; SUBMONOLAYER
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Academic Press
- Publisher place: London
- Date published: 2026
- Source:
- Título: Micro and Nanostructures
- Volume/Número/Paginação/Ano: Volume 212, April 2026, 208567
- Este artigo NÃO possui versão em acesso aberto
-
Status: Nenhuma versão em acesso aberto identificada -
ABNT
CANTALICE, T. F. e URAHATA, S. M. e QUIVY, A. A. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation. Micro and Nanostructures, 2026Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2026.208567. Acesso em: 15 mar. 2026. -
APA
Cantalice, T. F., Urahata, S. M., & Quivy, A. A. (2026). Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation. Micro and Nanostructures. doi:https://doi.org/10.1016/j.micrna.2026.208567 -
NLM
Cantalice TF, Urahata SM, Quivy AA. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation [Internet]. Micro and Nanostructures. 2026 ;[citado 2026 mar. 15 ] Available from: https://doi.org/10.1016/j.micrna.2026.208567 -
Vancouver
Cantalice TF, Urahata SM, Quivy AA. Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation [Internet]. Micro and Nanostructures. 2026 ;[citado 2026 mar. 15 ] Available from: https://doi.org/10.1016/j.micrna.2026.208567 - In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots
- INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
- High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
- Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
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