Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector (2019)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; AL ZEIDAN, AHMAD - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- DOI: 10.1109/SBMicro.2019.8919349
- Subjects: FÍSICO-QUÍMICA; FOTODETECTORES; EPITAXIA POR FEIXE MOLECULAR; ELETRÔNICA QUÂNTICA; FILMES FINOS; SEMICONDUTIVIDADE
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE-Institute of Electrical and Electronics Engineers
- Publisher place: New York
- Date published: 2019
- Source:
- Título: IEEE
- Volume/Número/Paginação/Ano: 04p., Proceedings Paper
- Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro)
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
AL ZEIDAN, Ahmad et al. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919349. Acesso em: 30 dez. 2025. , 2019 -
APA
Al Zeidan, A., Cantalice, T. F. de, Garcia, A. J., Deneke, C. F., & Quivy, A. A. (2019). Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919349 -
NLM
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2025 dez. 30 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349 -
Vancouver
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2025 dez. 30 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349 - Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
- Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
- High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS
- The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells
Informações sobre o DOI: 10.1109/SBMicro.2019.8919349 (Fonte: oaDOI API)
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