Evidence of weak strain field in InAs/GaAs submonolayer quantum dots (2022)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; AL ZEIDAN, AHMAD - IF ; CANTALICE, TIAGO FERNANDES DE - IF ; SANTOS, THALES BORRELY DOS - IF
- Unidade: IF
- DOI: 10.1016/j.micrna.2022.207449
- Assunto: POÇOS QUÂNTICOS
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Micro and Nanostructures
- Volume/Número/Paginação/Ano: v. 172, 207449, 2022
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CANTALICE, Tiago Fernandes de et al. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, v. 172, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2022.207449. Acesso em: 13 out. 2024. -
APA
Cantalice, T. F. de, Alzeidan, A., Jacobsen, G. M., Santos, T. B. dos, Teodoro, M. D., & Quivy, A. A. (2022). Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, 172. doi:10.1016/j.micrna.2022.207449 -
NLM
Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 out. 13 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449 -
Vancouver
Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 out. 13 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449 - Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
- Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
- The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells
- ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL
- Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction
- On the importance of atom probe tomography for the development of new nanoscale devices
- Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
Informações sobre o DOI: 10.1016/j.micrna.2022.207449 (Fonte: oaDOI API)
Download do texto completo
Tipo | Nome | Link | |
---|---|---|---|
1-s2.0-S277301232200262X-... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas