Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SANTOS, THALES BORRELY DOS - IF ; AL ZEIDAN, AHMAD - IF
- Unidade: IF
- DOI: 10.1063/5.0219815
- Subjects: POÇOS QUÂNTICOS; CÉLULAS SOLARES; FOTOLUMINESCÊNCIA; LASER DO ESTADO SÓLIDO
- Keywords: QUANTUM CONFINEMENT; ELECTRONIC BAND STRUCTURE; SOLAR CELLS; EMISSION SPECTROSCOPY; QUANTUM DOTS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM WELLS; INFRARED PHOTODETECTOR; SOLID STATE LASERS
- Language: Inglês
- Imprenta:
- Publisher: AIP Publishing
- Publisher place: Melville, NY
- Date published: 2024
- Source:
- Título: Applied Physics Letters
- Volume/Número/Paginação/Ano: v. 125, 122108 (2024)
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: cc-by-nc
-
ABNT
HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 31 dez. 2025. -
APA
Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815 -
NLM
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 dez. 31 ] Available from: https://doi.org/10.1063/5.0219815 -
Vancouver
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 dez. 31 ] Available from: https://doi.org/10.1063/5.0219815 - Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
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Informações sobre o DOI: 10.1063/5.0219815 (Fonte: oaDOI API)
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