INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS (2022)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- Subjects: FOTODETECTORES; ARSÊNIO
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 2022
- Source:
- Título: Resumos
- Conference titles: Encontro de Outono da Sociedade Brasileira de Física
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ABNT
ALZEIDAN, Ahmad e CANTALICE, Tiago Fernandes de e QUIVY, Alain André. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 30 dez. 2025. -
APA
Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2022). INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2025 dez. 30 ] -
Vancouver
Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2025 dez. 30 ] - High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of rapid thermal annealing on Stranski-Krastanov and submonolayer quantum dots
- Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
- In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots
- Influência da segregação dos átomos de Índio sobre o desempenho de fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamadas de InAs/GaAs
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