Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction (2023)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SANTOS, THALES BORRELY DOS - IF ; LIMA, MARCELO DELMONDES DE - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- DOI: 10.1016/j.solmat.2023.112281
- Assunto: EPITAXIA POR FEIXE MOLECULAR
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Solar Energy Materials and Solar Cells
- Volume/Número/Paginação/Ano: v. 254, 112281, 2023
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 15 fev. 2026. -
APA
Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281 -
NLM
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2026 fev. 15 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281 -
Vancouver
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2026 fev. 15 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281 - Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves
- The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells
- Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
- ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL
- On the importance of atom probe tomography for the development of new nanoscale devices
- Otimização de células solares de heteroestruturas III-V baseada em dados experimentais
- Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy
- INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
Informações sobre o DOI: 10.1016/j.solmat.2023.112281 (Fonte: oaDOI API)
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