IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY (2022)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CURBELO, VICTOR MANUEL ORLANDO - IF
- Unidade: IF
- Assunto: FOTOLUMINESCÊNCIA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 2022
- Source:
- Título: Resumos
- Conference titles: Encontro de Outono da Sociedade Brasileira de Física
-
ABNT
CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 18 fev. 2026. -
APA
Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2026 fev. 18 ] -
Vancouver
Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2026 fev. 18 ] - Capping of InAs quantum dots by migration enhanced epitaxy
- Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots
- Cobertura de pontos quânticos de InAs pela técnica de epitaxia por migração aumentada
- Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
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