Capping of InAs quantum dots by migration enhanced epitaxy (2022)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CURBELO, VICTOR MANUEL ORLANDO - IF
- Unidade: IF
- DOI: 10.1109/SBMICRO55822.2022.9881016
- Assunto: EPITAXIA POR FEIXE MOLECULAR
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro)
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. Capping of InAs quantum dots by migration enhanced epitaxy. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881016. Acesso em: 02 jan. 2026. -
APA
Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). Capping of InAs quantum dots by migration enhanced epitaxy. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881016 -
NLM
Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2026 jan. 02 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016 -
Vancouver
Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2026 jan. 02 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016 - IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY
- Cobertura de pontos quânticos de InAs pela técnica de epitaxia por migração aumentada
- Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots
- Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots
- Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
- Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots
- Photoluminescence Study of Self-Assembled Quantum Dots of 'IN''AS'
- Growth and characterization of distributed bragg reflectors (dbrs) for the fabrication of optical devices
- Análise do Circuito de Retroação de um Microscópio de Tunelamento(STM)
- AFM and PL characterization of the continous evolution cycle of MBE-grown self-assembled InAs quantum dots
Informações sobre o DOI: 10.1109/SBMICRO55822.2022.9881016 (Fonte: oaDOI API)
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