Capping of InAs quantum dots by migration enhanced epitaxy (2022)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; CURBELO, VICTOR MANUEL ORLANDO - IF
- Unidade: IF
- DOI: 10.1109/SBMICRO55822.2022.9881016
- Assunto: EPITAXIA POR FEIXE MOLECULAR
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro)
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. Capping of InAs quantum dots by migration enhanced epitaxy. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881016. Acesso em: 17 fev. 2026. -
APA
Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). Capping of InAs quantum dots by migration enhanced epitaxy. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881016 -
NLM
Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2026 fev. 17 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016 -
Vancouver
Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2026 fev. 17 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016 - IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY
- Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots
- Cobertura de pontos quânticos de InAs pela técnica de epitaxia por migração aumentada
- Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
Informações sobre o DOI: 10.1109/SBMICRO55822.2022.9881016 (Fonte: oaDOI API)
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