On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system (2020)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF ; AVANCI, LUIS HUMBERTO - IF
- Unidade: IF
- Assunto: DIFRAÇÃO POR RAIOS X
- Agências de fomento:
- Language: Inglês
- Imprenta:
-
ABNT
AVANCI, L H et al. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0411508.pdf. Acesso em: 29 jan. 2026. , 2020 -
APA
Avanci, L. H., Remedios, C. M. R., Quivy, A. A., & Morelhão, S. L. (2020). On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0411508.pdf -
NLM
Avanci LH, Remedios CMR, Quivy AA, Morelhão SL. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system [Internet]. 2020 ;[citado 2026 jan. 29 ] Available from: https://arxiv.org/pdf/cond-mat/0411508.pdf -
Vancouver
Avanci LH, Remedios CMR, Quivy AA, Morelhão SL. On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system [Internet]. 2020 ;[citado 2026 jan. 29 ] Available from: https://arxiv.org/pdf/cond-mat/0411508.pdf - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
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