Synchrotron X-ray techniques for studying nanostructured semiconductor devices (2006)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
FREITAS, Raul de Oliveira et al. Synchrotron X-ray techniques for studying nanostructured semiconductor devices. 2006, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2006. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0320-1.pdf. Acesso em: 03 out. 2024. -
APA
Freitas, R. de O., Lamas, T. E., Quivy, A. A., & Morelhão, S. L. (2006). Synchrotron X-ray techniques for studying nanostructured semiconductor devices. In . São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0320-1.pdf -
NLM
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron X-ray techniques for studying nanostructured semiconductor devices [Internet]. 2006 ;[citado 2024 out. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0320-1.pdf -
Vancouver
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron X-ray techniques for studying nanostructured semiconductor devices [Internet]. 2006 ;[citado 2024 out. 03 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0320-1.pdf - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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