Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices (2006)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: MATERIAIS (PESQUISA); SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBPMat
- Publisher place: Rio de Janeiro
- Date published: 2006
- Source:
- Título do periódico: Poster Session
- Volume/Número/Paginação/Ano: Rio de Janeiro : SBPMat, 2006
- Conference titles: Encontro da Sociedade Brasileira de Pesquisas em Materiais (SBPMat)
-
ABNT
LAMAS, Tomás et al. Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices. 2006, Anais.. Rio de Janeiro: SBPMat, 2006. Disponível em: http://www.sbpmat.org.br/5encontro/IndexPosterG.pdf. Acesso em: 23 abr. 2024. -
APA
Lamas, T., Morelhão, S. L., Perrotta, A., Quivy, A. A., & Freitas, R. de O. (2006). Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices. In Poster Session. Rio de Janeiro: SBPMat. Recuperado de http://www.sbpmat.org.br/5encontro/IndexPosterG.pdf -
NLM
Lamas T, Morelhão SL, Perrotta A, Quivy AA, Freitas R de O. Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices [Internet]. Poster Session. 2006 ;[citado 2024 abr. 23 ] Available from: http://www.sbpmat.org.br/5encontro/IndexPosterG.pdf -
Vancouver
Lamas T, Morelhão SL, Perrotta A, Quivy AA, Freitas R de O. Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices [Internet]. Poster Session. 2006 ;[citado 2024 abr. 23 ] Available from: http://www.sbpmat.org.br/5encontro/IndexPosterG.pdf - Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
