Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning (2005)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 2005
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
FREITAS, R. O. et al. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning. 2005, Anais.. São Paulo: Sociedade Brasileira de Física, 2005. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf. Acesso em: 19 abr. 2024. -
APA
Freitas, R. O., Morelhão, S. L., Quivy, A. A., & Avanci, L. H. (2005). Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning. In Resumos. São Paulo: Sociedade Brasileira de Física. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf -
NLM
Freitas RO, Morelhão SL, Quivy AA, Avanci LH. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning [Internet]. Resumos. 2005 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf -
Vancouver
Freitas RO, Morelhão SL, Quivy AA, Avanci LH. Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning [Internet]. Resumos. 2005 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0813-1.pdf - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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