Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems (2009)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: POÇOS QUÂNTICOS; SISTEMA QUÂNTICO; ESPALHAMENTO
- Language: Inglês
- Imprenta:
- Conference titles: Activity Report 2008: LNLS/Brazilian Synchrotron Light Laboratory
-
ABNT
FREITAS, R O e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. 2009Tradução . . Disponível em: http://www.lnls.br/ar2008/web/index.html. Acesso em: 24 abr. 2024. -
APA
Freitas, R. O., Quivy, A. A., & Morelhão, S. L. (2009). Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. Recuperado de http://www.lnls.br/ar2008/web/index.html -
NLM
Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 abr. 24 ] Available from: http://www.lnls.br/ar2008/web/index.html -
Vancouver
Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2024 abr. 24 ] Available from: http://www.lnls.br/ar2008/web/index.html - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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