Two-dimensional intensity profiles of effective satellites (2002)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1107/s0021889801018921
- Subjects: DIFRAÇÃO POR RAIOS X; CRISTALOGRAFIA FÍSICA
- Language: Inglês
- Imprenta:
- Publisher place: Copenhagen
- Date published: 2002
- Source:
- Título: Journal of Applied Crystallography
- ISSN: 0021-8898
- Volume/Número/Paginação/Ano: v. 35, pt.1, p. 69-74, 2002
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
MORELHÃO, Sérgio Luiz et al. Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, v. 35, p. 69-74, 2002Tradução . . Disponível em: https://doi.org/10.1107/s0021889801018921. Acesso em: 28 jan. 2026. -
APA
Morelhão, S. L., Avanci, L. H., Quivy, A. A., & Abramog, E. (2002). Two-dimensional intensity profiles of effective satellites. Journal of Applied Crystallography, 35, 69-74. doi:10.1107/s0021889801018921 -
NLM
Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1107/s0021889801018921 -
Vancouver
Morelhão SL, Avanci LH, Quivy AA, Abramog E. Two-dimensional intensity profiles of effective satellites [Internet]. Journal of Applied Crystallography. 2002 ; 35 69-74.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1107/s0021889801018921 - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
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- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
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Informações sobre o DOI: 10.1107/s0021889801018921 (Fonte: oaDOI API)
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