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Artigo de periodico
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Albalawi, Hindi; Kazakov, Igor P.; Klekovkin, Alexey V.; ZinovEv, Sergey A; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
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ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 05 dez. 2025.
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Artigo de periodico
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Prando, G. A.; Gordo, Vanessa Orsi; Puustinen, J.; Hilska, J.; Alghamdi, H. M.; Som, G; Gunes, M; Akyol, M; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Galeti, Helder Vinícius Avanço; Henini, M; Gobato, Yara Galvao; Guina, Mircea
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: FOTOLUMINESCÊNCIA, EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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ABNT
PRANDO, G. A. et al. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, p. 1-7, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aad02e. Acesso em: 05 dez. 2025.
APA
Prando, G. A., Gordo, V. O., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., et al. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33( 8), 1-7. doi:10.1088/1361-6641/aad02e
NLM
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Vancouver
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Artigo de periodico
Stability and accuracy control of k . p parameters (2016)
Bastos, Carlos M. O.; Sabino, Fernando P.; Faria Junior, Paulo E.; Campos, Tiago; Silva, Juarez Lopes Ferreira da ; Sipahi, Guilherme Matos
Source: Semiconductor Science and Technology. Unidades: IQSC, IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, SPIN, SISTEMAS HAMILTONIANOS
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ABNT
BASTOS, Carlos M. O. et al. Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, v. 31, n. 10, p. 105002-1-105002-10, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/10/105002. Acesso em: 05 dez. 2025.
APA
Bastos, C. M. O., Sabino, F. P., Faria Junior, P. E., Campos, T., Silva, J. L. F. da, & Sipahi, G. M. (2016). Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, 31( 10), 105002-1-105002-10. doi:10.1088/0268-1242/31/10/105002
NLM
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002
Vancouver
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002
Artigo de periodico
Structure evaluation of submicrometre silicon chips removed by diamond turning (2007)
Jasinevicius, Renato Goulart ; Duduch, Jaime Gilberto ; Pizani, Paulo Sérgio
Source: Semiconductor Science and Technology. Unidade: EESC
Subjects: SEMICONDUTORES, MICROSCÓPIO ELETRÔNICO, DIAMANTE
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, v. 22, n. 5, p. 561-573, 2007Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/22/5/019. Acesso em: 05 dez. 2025.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, 22( 5), 561-573. doi:10.1088/0268-1242/22/5/019
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
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ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 05 dez. 2025.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Anisotropy of the cyclotron mass in superlattices containing two populated minibands (2001)
Henriques, André Bohomoletz ; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
HENRIQUES, André Bohomoletz e SOUZA, P. L. e YAVICH, B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, v. 16, n. 1, p. 1-6, 2001Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/16/1/301. Acesso em: 05 dez. 2025.
APA
Henriques, A. B., Souza, P. L., & Yavich, B. (2001). Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, 16( 1), 1-6. doi:10.1088/0268-1242/16/1/301
NLM
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301
Vancouver
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301
Artigo de periodico
Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
Tabata, A.; Lima, A. P.; Leite, J. R.; Lemos, V.; Schikora, D.; Schottker, B.; Kohler, U.; As, D. J.; Lischka, K.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
TABATA, A. et al. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, v. 14, n. 4, p. 318-322, 1999Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/14/4/005. Acesso em: 05 dez. 2025.
APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, 14( 4), 318-322. doi:10.1088/0268-1242/14/4/005
NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Artigo de periodico
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)
Rodrigues, S C P; Rosa, A L; Scolfaro, Luísa Maria Ribeiro; Beliaev, Dmitri; Leite, J. R.; Enderlein, R; Alves, J L A
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 05 dez. 2025.
APA
Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 dez. 05 ]
Vancouver
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 dez. 05 ]
Artigo de periodico
Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
Soares, J A N T; Enderlein, R; Beliaev, D; Leite, J. R.; Saito, M
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: ENGENHARIA MECÂNICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 05 dez. 2025.
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Artigo de periodico
Single and periodically Si Delta-doped Inp grown by Lp-movpe (1997)
Yavich, B; Souza, P. L.; Pamplona-Pires, M; Henriques, André Bohomoletz ; Gonçalves, L. C. D.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: FÍSICA
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ABNT
YAVICH, B et al. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, v. 12, p. 481-484, 1997Tradução . . Acesso em: 05 dez. 2025.
APA
Yavich, B., Souza, P. L., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, 12, 481-484.
NLM
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2025 dez. 05 ]
Vancouver
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2025 dez. 05 ]
Artigo de periodico
Electronic properties of gated 'DELTA'-doped semiconductors (1997)
Gonçalves, L. C. D.; Henriques, André Bohomoletz
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
GONÇALVES, L. C. D. e HENRIQUES, André Bohomoletz. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, v. 12, p. 203-9, 1997Tradução . . Acesso em: 05 dez. 2025.
APA
Gonçalves, L. C. D., & Henriques, A. B. (1997). Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, 12, 203-9.
NLM
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2025 dez. 05 ]
Vancouver
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2025 dez. 05 ]
Artigo de periodico
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling (1997)
Gonçalves, L. C. D.; Henriques, André Bohomoletz ; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
GONÇALVES, L. C. D. et al. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, v. 12, p. 1455-1458, 1997Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/12/11/022. Acesso em: 05 dez. 2025.
APA
Gonçalves, L. C. D., Henriques, A. B., Souza, P. L., & Yavich, B. (1997). Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, 12, 1455-1458. doi:10.1088/0268-1242/12/11/022
NLM
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022
Vancouver
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022
Artigo de periodico
Characterization of delta-doped superlattices by shubnikov-de haas measurements (1996)
Henriques, André Bohomoletz ; Gonçalves, L. C. D.; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
HENRIQUES, André Bohomoletz et al. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology, v. 11, p. 190-5, 1996Tradução . . Acesso em: 05 dez. 2025.
APA
Henriques, A. B., Gonçalves, L. C. D., Souza, P. L., & Yavich, B. (1996). Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology, 11, 190-5.
NLM
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology. 1996 ;11 190-5.[citado 2025 dez. 05 ]
Vancouver
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology. 1996 ;11 190-5.[citado 2025 dez. 05 ]
Artigo de periodico
Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS' (1993)
Henriques, André Bohomoletz ; Gonçalves, L. C. D.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: FÍSICA DE PARTÍCULAS
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ABNT
HENRIQUES, André Bohomoletz e GONÇALVES, L. C. D. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, v. 8 , n. 4 , p. 585-9, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Henriques, A. B., & Gonçalves, L. C. D. (1993). Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, 8 ( 4 ), 585-9.
NLM
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2025 dez. 05 ]
Vancouver
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2025 dez. 05 ]
Artigo de periodico
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures (1993)
Beliaev, D; Scolfaro, L M R; Leite, J. R.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
BELIAEV, D e SCOLFARO, L M R e LEITE, J. R. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, v. 8 , p. 1479, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, 8 , 1479.
NLM
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2025 dez. 05 ]
Vancouver
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2025 dez. 05 ]
Artigo de periodico
Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices (1993)
Ferraz, A. C.; Srivastava, G. P.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
FERRAZ, A. C. e SRIVASTAVA, G. P. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, v. 8 , n. ja 1993, p. 67-72, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Ferraz, A. C., & Srivastava, G. P. (1993). Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, 8 ( ja 1993), 67-72.
NLM
Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.[citado 2025 dez. 05 ]
Vancouver
Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.[citado 2025 dez. 05 ]
Artigo de periodico
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy (1991)
Henriques, André Bohomoletz ; Chidley, E T R; Haywood, S K; Nicholas, R J; Mason, N J; Walker, P J
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, v. 6 , p. 45, 1991Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/6/1/009. Acesso em: 05 dez. 2025.
APA
Henriques, A. B., Chidley, E. T. R., Haywood, S. K., Nicholas, R. J., Mason, N. J., & Walker, P. J. (1991). Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, 6 , 45. doi:10.1088/0268-1242/6/1/009
NLM
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009
Vancouver
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009
Artigo de periodico
Many-electron treatment for chalcogen complexes in silicon (1990)
Fazzio, Adalberto ; Antonelli, A; Ferreira de Paula Junior, H; Canuto, Sylvio Roberto Accioly
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FAZZIO, Adalberto et al. Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, v. 5 , n. 3 , p. 196-9, 1990Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/5/3/002. Acesso em: 05 dez. 2025.
APA
Fazzio, A., Antonelli, A., Ferreira de Paula Junior, H., & Canuto, S. R. A. (1990). Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, 5 ( 3 ), 196-9. doi:10.1088/0268-1242/5/3/002
NLM
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto SRA. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Vancouver
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto SRA. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Artigo de periodico
Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells (1987)
Degani, Marcos Henrique; Hipólito, Oscar
Source: Semiconductor Science and Technology. Unidade: IFSC
Subjects: FÍSICA TEÓRICA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells. Semiconductor Science and Technology, v. 2 , p. 578-581, 1987Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/2/9/003. Acesso em: 05 dez. 2025.
APA
Degani, M. H., & Hipólito, O. (1987). Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells. Semiconductor Science and Technology, 2 , 578-581. doi:10.1088/0268-1242/2/9/003
NLM
Degani MH, Hipólito O. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells [Internet]. Semiconductor Science and Technology. 1987 ;2 578-581.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/2/9/003
Vancouver
Degani MH, Hipólito O. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells [Internet]. Semiconductor Science and Technology. 1987 ;2 578-581.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/2/9/003

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