Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
- Authors:
- Souza, Daniele de - Universidade Federal de São Carlos (UFSCar)
- Alhassan, Sultan
- Alotaibi, Saud
- Alhassni, Amra
- Almunyif, Amjad
- Albalawi, Hindi
- Kazakov, Igor P.
- Klekovkin, Alexey V.
- ZinovEv, Sergey A
- Likhachev, Igor A.
- Pashaev, Elkhan M.
- Souto, Sérgio Paulo Amaral
- Gobato, Yara Galvao - Universidade Federal de São Carlos (UFSCar)
- Galeti, Helder Vinícius Avanço - Universidade Federal de São Carlos (UFSCar)
- Henini, Mohamed
- Autor USP: SOUTO, SERGIO PAULO AMARAL - FZEA
- Unidade: FZEA
- DOI: 10.1088/1361-6641/abf3d1
- Subjects: SEMICONDUTORES; EPITAXIA POR FEIXE MOLECULAR
- Keywords: Exciton localization; Optical properties; Doped semiconductor; Structural disorder; Dilute bismides
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Semiconductor Science and Technology
- ISSN: 1361-6641
- Volume/Número/Paginação/Ano: v. 36, n. 7, art. 075018, p. 1-12, 2021
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 14 fev. 2026. -
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1 -
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2026 fev. 14 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1 -
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2026 fev. 14 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1 - Ressonancia magnetica nuclear em condutores superionicos de estrutura fluorita
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Informações sobre o DOI: 10.1088/1361-6641/abf3d1 (Fonte: oaDOI API)
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