Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy (2017)
- Authors:
- Autor USP: SOUTO, SERGIO PAULO AMARAL - FZEA
- Unidade: FZEA
- DOI: 10.1109/SBMicro.2017.8113028
- Subjects: FÍSICA ÓPTICA; EPITAXIA POR FEIXE MOLECULAR; FOTOLUMINESCÊNCIA; ESPECTROSCOPIA RAMAN
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway, NJ
- Date published: 2017
- Source:
- Título: Proceedings
- Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro)
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PITON, Marcelo Rizzo et al. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. 2017, Anais.. Piscataway, NJ: IEEE, 2017. Disponível em: https://doi.org/10.1109/SBMicro.2017.8113028. Acesso em: 28 jan. 2026. -
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., Souto, S. P. A., Galeti, H. V. A., et al. (2017). Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. In Proceedings. Piscataway, NJ: IEEE. doi:10.1109/SBMicro.2017.8113028 -
NLM
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2026 jan. 28 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028 -
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2026 jan. 28 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028 - Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates
- Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties
- Density and ultrasonic velocities in fast ionic conducting borate glasses
- Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates
- Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy
- Mixed salts effect in ternary borate glasses
- Modificações estruturais e eletrônicas devido ao nitrogênio e ao hidrogênio em filmes de CN:H
- Propriedades dos vidros lítio tetraboratos com diferentes condições de preparação
- Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
- The role of hydrogen in nitrogen - containing diamondlike films studied by photoelectron spectroscopy
Informações sobre o DOI: 10.1109/SBMicro.2017.8113028 (Fonte: oaDOI API)
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