Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 17 ago. 2024.APA
Nicolett, A. S., Martino, J. A., & Pavanello, M. A. (2003). Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 ago. 17 ]Vancouver
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 ago. 17 ]