A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2003)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP
- Unidades: EP
- Subjects: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Place of publication: Pennington
- Date published: 2003
- ISBN: 1-56677-389-X
- Source:
- Título do periódico: Microelectronic Technology and Devices SBMicro 2003
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; SIMOEN, Eddy; et al. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003[S.l: s.n.], 2003. -
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Mercha, A., Claeys, C., & De Meyer, K. (2003). A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. -
Vancouver
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
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