The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C (2003)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Publisher place: Pennington
- Date published: 2003
- ISBN: 1-56677-389-X
- Source:
- Título do periódico: Microelectronic Technology and Devices SBMicro 2003
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 27 set. 2024. -
APA
Bellodi, M., & Martino, J. A. (2003). The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 27 ] -
Vancouver
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 set. 27 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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