Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C (2003)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Publisher place: Pennington
- Date published: 2003
- ISBN: 1-56677-389-X
- Source:
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 27 fev. 2026. -
APA
Bellodi, M., & Martino, J. A. (2003). Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 fev. 27 ] -
Vancouver
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 fev. 27 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
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- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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