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Artigo de periodico
Bioinspired Antimicrobial PLA with Nanocones on the Surface for Rapid Deactivation of Omicron SARS-CoV-2 (2023)
Silva, Daniel José da ; Duran, Adriana; Cabral, Aline D.; Fonseca, Fernando Luiz Affonso ; Hui,Wang Shu ; Parra, Duclerc Fernandes ; Bueno, Rodrigo F; Pereyra, Inés ; Rosa, Derval S
Source: ACS Biomaterials Science & Engineering. Unidade: EP
Subjects: COBRE, SUPERFÍCIES
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SILVA, Daniel José da et al. Bioinspired Antimicrobial PLA with Nanocones on the Surface for Rapid Deactivation of Omicron SARS-CoV-2. ACS Biomaterials Science & Engineering, p. 9 , 2023Tradução . . Disponível em: https://doi.org/10.1021/acsbiomaterials.2c01529. Acesso em: 05 out. 2024.
APA
Silva, D. J. da, Duran, A., Cabral, A. D., Fonseca, F. L. A., Hui, W. S., Parra, D. F., et al. (2023). Bioinspired Antimicrobial PLA with Nanocones on the Surface for Rapid Deactivation of Omicron SARS-CoV-2. ACS Biomaterials Science & Engineering, 9 . doi:10.1021/acsbiomaterials.2c01529
NLM
Silva DJ da, Duran A, Cabral AD, Fonseca FLA, Hui WS, Parra DF, Bueno RF, Pereyra I, Rosa DS. Bioinspired Antimicrobial PLA with Nanocones on the Surface for Rapid Deactivation of Omicron SARS-CoV-2 [Internet]. ACS Biomaterials Science & Engineering. 2023 ;9 .[citado 2024 out. 05 ] Available from: https://doi.org/10.1021/acsbiomaterials.2c01529
Vancouver
Silva DJ da, Duran A, Cabral AD, Fonseca FLA, Hui WS, Parra DF, Bueno RF, Pereyra I, Rosa DS. Bioinspired Antimicrobial PLA with Nanocones on the Surface for Rapid Deactivation of Omicron SARS-CoV-2 [Internet]. ACS Biomaterials Science & Engineering. 2023 ;9 .[citado 2024 out. 05 ] Available from: https://doi.org/10.1021/acsbiomaterials.2c01529
Trabalho de evento
Electrochemical electrodes based on laser induced graphene on PECVD a-SiC:H and polyimide (2022)
Faria, D. J; Pinto, Aline Leone Muguet; Bertotti, Mauro ; Carreño, Marcelo Nelson Paez; Pereyra, Inés
Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidades: IQ, EP
Assunto: ELETROQUÍMICA
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FARIA, D. J et al. Electrochemical electrodes based on laser induced graphene on PECVD a-SiC:H and polyimide. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881043. Acesso em: 05 out. 2024.
APA
Faria, D. J., Pinto, A. L. M., Bertotti, M., Carreño, M. N. P., & Pereyra, I. (2022). Electrochemical electrodes based on laser induced graphene on PECVD a-SiC:H and polyimide. In . Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881043
NLM
Faria DJ, Pinto ALM, Bertotti M, Carreño MNP, Pereyra I. Electrochemical electrodes based on laser induced graphene on PECVD a-SiC:H and polyimide [Internet]. 2022 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881043
Vancouver
Faria DJ, Pinto ALM, Bertotti M, Carreño MNP, Pereyra I. Electrochemical electrodes based on laser induced graphene on PECVD a-SiC:H and polyimide [Internet]. 2022 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881043
Artigo de periodico
Fabrication and characterization of aluminum nitride pedestal-type optical waveguide (2014)
Armas Alvarado, Maria Elisia; Pelegrini, Marcus Vinícius ; Pereyra, Inés ; Assumpção, Thiago Alexandre Alves de ; Kassab, Luciana Reyes Pires ; Alayo Chávez, Marco Isaías
Source: Canadian Journal of Physics. Unidade: EP
Subjects: RASTREAMENTO, ULTRASSONOGRAFIA
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ARMAS ALVARADO, Maria Elisia et al. Fabrication and characterization of aluminum nitride pedestal-type optical waveguide. Canadian Journal of Physics, v. 92, p. 952-954, 2014Tradução . . Disponível em: https://doi.org/10.1139/cjp-2013-0587. Acesso em: 05 out. 2024.
APA
Armas Alvarado, M. E., Pelegrini, M. V., Pereyra, I., Assumpção, T. A. A. de, Kassab, L. R. P., & Alayo Chávez, M. I. (2014). Fabrication and characterization of aluminum nitride pedestal-type optical waveguide. Canadian Journal of Physics, 92, 952-954. doi:10.1139/cjp-2013-0587
NLM
Armas Alvarado ME, Pelegrini MV, Pereyra I, Assumpção TAA de, Kassab LRP, Alayo Chávez MI. Fabrication and characterization of aluminum nitride pedestal-type optical waveguide [Internet]. Canadian Journal of Physics. 2014 ;92 952-954.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0587
Vancouver
Armas Alvarado ME, Pelegrini MV, Pereyra I, Assumpção TAA de, Kassab LRP, Alayo Chávez MI. Fabrication and characterization of aluminum nitride pedestal-type optical waveguide [Internet]. Canadian Journal of Physics. 2014 ;92 952-954.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0587
Artigo de periodico
Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering1 (2014)
Pelegrini, Marcelo Aparecido ; Pereyra, Inés ; Alvarado, M. A; Alayo Chávez, Marco Isaías
Source: Canadian Journal of Physics. Unidade: EP
Subjects: FILMES FINOS, FOTÔNICA
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PELEGRINI, Marcelo Aparecido et al. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering1. Canadian Journal of Physics, v. 92, n. 7/8, p. 940-942, 2014Tradução . . Disponível em: https://doi.org/10.1139/cjp-2013-0556. Acesso em: 05 out. 2024.
APA
Pelegrini, M. A., Pereyra, I., Alvarado, M. A., & Alayo Chávez, M. I. (2014). Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering1. Canadian Journal of Physics, 92( 7/8), 940-942. doi:10.1139/cjp-2013-0556
NLM
Pelegrini MA, Pereyra I, Alvarado MA, Alayo Chávez MI. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering1 [Internet]. Canadian Journal of Physics. 2014 ; 92( 7/8): 940-942.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0556
Vancouver
Pelegrini MA, Pereyra I, Alvarado MA, Alayo Chávez MI. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering1 [Internet]. Canadian Journal of Physics. 2014 ; 92( 7/8): 940-942.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0556
Artigo de periodico
Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering (2014)
Pelegrini, Marcus Vinícius ; Alayo Chávez, Marco Isaías ; Armas Alvarado, Maria Elisia; Pereyra, Inés
Source: Canadian Journal of Physics. Unidade: EP
Assunto: RADIOGRAFIA
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PELEGRINI, Marcus Vinícius et al. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering. Canadian Journal of Physics, v. 92, p. 940-942, 2014Tradução . . Disponível em: https://doi.org/10.1139/cjp-2013-0556. Acesso em: 05 out. 2024.
APA
Pelegrini, M. V., Alayo Chávez, M. I., Armas Alvarado, M. E., & Pereyra, I. (2014). Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering. Canadian Journal of Physics, 92, 940-942. doi:10.1139/cjp-2013-0556
NLM
Pelegrini MV, Alayo Chávez MI, Armas Alvarado ME, Pereyra I. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering [Internet]. Canadian Journal of Physics. 2014 ;92 940-942.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0556
Vancouver
Pelegrini MV, Alayo Chávez MI, Armas Alvarado ME, Pereyra I. Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering [Internet]. Canadian Journal of Physics. 2014 ;92 940-942.[citado 2024 out. 05 ] Available from: https://doi.org/10.1139/cjp-2013-0556
Trabalho de evento
TiO2 nanotubes production and characterization (2012)
Fraga, Tiago Marques; Albertin, Katia Franklin ; Pereyra, Inés
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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FRAGA, Tiago Marques e ALBERTIN, Katia Franklin e PEREYRA, Inés. TiO2 nanotubes production and characterization. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0199ecst. Acesso em: 05 out. 2024.
APA
Fraga, T. M., Albertin, K. F., & Pereyra, I. (2012). TiO2 nanotubes production and characterization. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0199ecst
NLM
Fraga TM, Albertin KF, Pereyra I. TiO2 nanotubes production and characterization [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/04901.0199ecst
Vancouver
Fraga TM, Albertin KF, Pereyra I. TiO2 nanotubes production and characterization [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/04901.0199ecst
Trabalho de evento
Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes (2012)
Abe, Igor Yamamoto ; Pereyra, Inés
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABE, Igor Yamamoto e PEREYRA, Inés. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0255ecst. Acesso em: 05 out. 2024.
APA
Abe, I. Y., & Pereyra, I. (2012). Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0255ecst
NLM
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/04901.0255ecst
Vancouver
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/04901.0255ecst
Artigo de periodico
Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IEE
Assunto: ELETROQUÍMICA
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CAVALLARI, Marco Roberto et al. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 425-432, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474188. Acesso em: 05 out. 2024.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 425-432. doi:10.1149/1.3474188
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.3474188
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.3474188
Artigo de periodico
Study of TiOxNy MOS capacitors (2010)
Albertin, Katia Franklin ; Souza, Denise Criado Pereira de ; Zuñiga Paez, Alejandro A.; Pereyra, Inés
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: CAPACITORES, MICROSCOPIA ELETRÔNICA
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ALBERTIN, Katia Franklin et al. Study of TiOxNy MOS capacitors. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 349-358, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3183707. Acesso em: 05 out. 2024.
APA
Albertin, K. F., Souza, D. C. P. de, Zuñiga Paez, A. A., & Pereyra, I. (2010). Study of TiOxNy MOS capacitors. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 349-358. doi:10.1149/1.3183707
NLM
Albertin KF, Souza DCP de, Zuñiga Paez AA, Pereyra I. Study of TiOxNy MOS capacitors [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ; 31( 1): 349-358.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.3183707
Vancouver
Albertin KF, Souza DCP de, Zuñiga Paez AA, Pereyra I. Study of TiOxNy MOS capacitors [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ; 31( 1): 349-358.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.3183707
Artigo de periodico
Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer (2009)
Albertin, Katia Franklin ; Pereyra, Inés
Source: Journal of Vacuum Science and Technology B. Unidade: EP
Assunto: DIELÉTRICOS
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ALBERTIN, Katia Franklin e PEREYRA, Inés. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, v. 27, n. ja/feb. 2009, p. 236-245, 2009Tradução . . Acesso em: 05 out. 2024.
APA
Albertin, K. F., & Pereyra, I. (2009). Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, 27( ja/feb. 2009), 236-245.
NLM
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2024 out. 05 ]
Vancouver
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2024 out. 05 ]
Trabalho de evento
Improved density of states and effective charge density in SI/PECVD Si/OxNy interface (2008)
Albertin, Katia Franklin ; Pereyra, Inés
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ALBERTIN, Katia Franklin e PEREYRA, Inés. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 05 out. 2024.
APA
Albertin, K. F., & Pereyra, I. (2008). Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 out. 05 ]
Vancouver
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 out. 05 ]
Trabalho de evento
Photoluminescence in silicon-rich PECVD silicon oxynitride alloys (2008)
Ribeiro, M; Pereyra, Inés
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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RIBEIRO, M e PEREYRA, Inés. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 05 out. 2024.
APA
Ribeiro, M., & Pereyra, I. (2008). Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2024 out. 05 ]
Vancouver
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2024 out. 05 ]
Trabalho de evento
One mask step a-Si:H/a-SiOxNy thin film transistor (2004)
Albertin, Katia Franklin ; Pereyra, Inés
Source: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, CAPACITORES, FILMES FINOS
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ALBERTIN, Katia Franklin e PEREYRA, Inés. One mask step a-Si:H/a-SiOxNy thin film transistor. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 05 out. 2024.
APA
Albertin, K. F., & Pereyra, I. (2004). One mask step a-Si:H/a-SiOxNy thin film transistor. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 out. 05 ]
Vancouver
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 out. 05 ]
Parte de monografia/livro
Silicon carbide clusters in silicon formed by carbon ions implantation (2003)
Escobar Forhan, Neisy Amparo; Pereyra, Inés
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ESCOBAR FORHAN, Neisy Amparo e PEREYRA, Inés. Silicon carbide clusters in silicon formed by carbon ions implantation. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 05 out. 2024.
APA
Escobar Forhan, N. A., & Pereyra, I. (2003). Silicon carbide clusters in silicon formed by carbon ions implantation. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 out. 05 ]
Vancouver
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 out. 05 ]
Artigo de periodico
Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films (2003)
Scopel, Wanderla Luis ; Silva, Antonio Jose Roque da ; Orellana, Walter M; Prado, Rogerio Junqueira; Fantini, Márcia Carvalho de Abreu ; Fazzio, Adalberto ; Pereyra, Inés
Source: Physical Review B. Unidades: IF, EP
Subjects: ESTRUTURA ATÔMICA (FÍSICA MODERNA), MÉTODO DE MONTE CARLO
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SCOPEL, Wanderla Luis et al. Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films. Physical Review B, v. 68, n. 15, p. 155332/1-155332/6, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.68.155332. Acesso em: 05 out. 2024.
APA
Scopel, W. L., Silva, A. J. R. da, Orellana, W. M., Prado, R. J., Fantini, M. C. de A., Fazzio, A., & Pereyra, I. (2003). Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films. Physical Review B, 68( 15), 155332/1-155332/6. doi:10.1103/physrevb.68.155332
NLM
Scopel WL, Silva AJR da, Orellana WM, Prado RJ, Fantini MC de A, Fazzio A, Pereyra I. Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films [Internet]. Physical Review B. 2003 ; 68( 15): 155332/1-155332/6.[citado 2024 out. 05 ] Available from: https://doi.org/10.1103/physrevb.68.155332
Vancouver
Scopel WL, Silva AJR da, Orellana WM, Prado RJ, Fantini MC de A, Fazzio A, Pereyra I. Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films [Internet]. Physical Review B. 2003 ; 68( 15): 155332/1-155332/6.[citado 2024 out. 05 ] Available from: https://doi.org/10.1103/physrevb.68.155332
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 05 out. 2024.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 out. 05 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 out. 05 ]
Artigo de periodico
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films (1998)
Pereyra, Inés ; Páez Carreño, Marcelo Nelson ; Tabacniks, Manfredo Harri ; Prado, Rogerio Junqueira; Fantini, Márcia Carvalho de Abreu
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: FÍSICA
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ABNT
PEREYRA, Inés et al. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, v. 84, n. 5, p. 2371-2379, 1998Tradução . . Acesso em: 05 out. 2024.
APA
Pereyra, I., Páez Carreño, M. N., Tabacniks, M. H., Prado, R. J., & Fantini, M. C. de A. (1998). Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, 84( 5), 2371-2379.
NLM
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 out. 05 ]
Vancouver
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 out. 05 ]
Artigo de periodico
On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films (1996)
Mastelaro, Valmor Roberto ; Flank, A M; Fantini, Márcia Carvalho de Abreu ; Bittencourt, Diomar da Rocha Santos; Páez Carreño, Marcelo Nelson ; Pereyra, Inés
Source: Journal of Applied Physics. Unidades: IF, EP
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MASTELARO, Valmor Roberto et al. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, v. 79, n. 3 , p. 1324-9, 1996Tradução . . Acesso em: 05 out. 2024.
APA
Mastelaro, V. R., Flank, A. M., Fantini, M. C. de A., Bittencourt, D. da R. S., Páez Carreño, M. N., & Pereyra, I. (1996). On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, 79( 3 ), 1324-9.
NLM
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2024 out. 05 ]
Vancouver
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2024 out. 05 ]
Artigo de periodico
Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers (1994)
Velasquez, E L Z; Fantini, Márcia Carvalho de Abreu ; Páez Carreño, Marcelo Nelson ; Pereyra, Inés ; Takahashi, H; Landers, R
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VELASQUEZ, E L Z et al. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, v. 75, n. ja 1994, p. 543-8, 1994Tradução . . Acesso em: 05 out. 2024.
APA
Velasquez, E. L. Z., Fantini, M. C. de A., Páez Carreño, M. N., Pereyra, I., Takahashi, H., & Landers, R. (1994). Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, 75( ja 1994), 543-8.
NLM
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2024 out. 05 ]
Vancouver
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2024 out. 05 ]
Artigo de periodico
Microvoids in diamond-like amorphous silicon carbide (1994)
Paez Carreño, Marcelo Nelson ; Pereyra, Inés ; Fantini, Márcia Carvalho de Abreu ; Takahashi, H; Landers, R
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAEZ CARREÑO, Marcelo Nelson et al. Microvoids in diamond-like amorphous silicon carbide. Journal of Applied Physics, v. 75, n. ja 1994, p. 538-42, 1994Tradução . . Disponível em: https://doi.org/10.1063/1.355835. Acesso em: 05 out. 2024.
APA
Paez Carreño, M. N., Pereyra, I., Fantini, M. C. de A., Takahashi, H., & Landers, R. (1994). Microvoids in diamond-like amorphous silicon carbide. Journal of Applied Physics, 75( ja 1994), 538-42. doi:10.1063/1.355835
NLM
Paez Carreño MN, Pereyra I, Fantini MC de A, Takahashi H, Landers R. Microvoids in diamond-like amorphous silicon carbide [Internet]. Journal of Applied Physics. 1994 ;75( ja 1994): 538-42.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.355835
Vancouver
Paez Carreño MN, Pereyra I, Fantini MC de A, Takahashi H, Landers R. Microvoids in diamond-like amorphous silicon carbide [Internet]. Journal of Applied Physics. 1994 ;75( ja 1994): 538-42.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.355835

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