Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films (1998)
- Authors:
- USP affiliated authors: ALVAREZ, INES PEREYRA DE - EP ; TABACNIKS, MANFREDO HARRI - IF ; FANTINI, MARCIA CARVALHO DE ABREU - IF ; CARRENO, MARCELO NELSON PAEZ - EP
- Unidades: EP; IF
- Assunto: FÍSICA
- Language: Inglês
- Source:
- Título do periódico: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v. 84, n. 5, p. 2371-2379, 1998
-
ABNT
PEREYRA, Inés et al. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, v. 84, n. 5, p. 2371-2379, 1998Tradução . . Acesso em: 12 set. 2024. -
APA
Pereyra, I., Páez Carreño, M. N., Tabacniks, M. H., Prado, R. J., & Fantini, M. C. de A. (1998). Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, 84( 5), 2371-2379. -
NLM
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 set. 12 ] -
Vancouver
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 set. 12 ] - Analise do espectro vibracional de ligas de silicio-carbono de composicao variavel
- Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime
- Microporos em a- 'SI ANTPOT.1-X' 'C ANTPOT.X': h do tipo diamante
- X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling
- Efeitos dos parametros de deposicao sobre a qualidade de multicamadas de a-'SI': h / a- 'SI ANTPOT.1-X' 'C ANTPOT.X' : h
- Al thermal diffusion in `alfa´-`Si IND.1-X´`C IND.X´:H Thin Film Studied by XAFS
- Highly ordered amosphous silicon-carbon alloys obtained by RF PECVD
- Low microvoid density wide gap amorphous silicon carbide
- Structural characterization of a-'SI IND.1-X''C IND.X'
- Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers
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