Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime (1997)
- Authors:
- USP affiliated authors: PEREYRA, INÊS - EP ; CARRENO, MARCELO NELSON PAEZ - EP ; FANTINI, MARCIA CARVALHO DE ABREU - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidades: EP; IF
- Assunto: FISICA APLICADA
- Language: Inglês
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 150-153, 1997
-
ABNT
PEREYRA, Inés et al. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics, v. 27/A, n. 4, p. 150-153, 1997Tradução . . Acesso em: 22 jan. 2026. -
APA
Pereyra, I., Paez Carreño, M. N., Prado, R. J., Tabacniks, M. H., & Fantini, M. C. de A. (1997). Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics, 27/A( 4), 150-153. -
NLM
Pereyra I, Paez Carreño MN, Prado RJ, Tabacniks MH, Fantini MC de A. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics. 1997 ; 27/A( 4): 150-153.[citado 2026 jan. 22 ] -
Vancouver
Pereyra I, Paez Carreño MN, Prado RJ, Tabacniks MH, Fantini MC de A. Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime. Brazilian Journal of Physics. 1997 ; 27/A( 4): 150-153.[citado 2026 jan. 22 ] - Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films
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- Al thermal diffusion in `alfa´-`Si IND.1-X´`C IND.X´:H Thin Film Studied by XAFS
- Filmes microcristalinos de silício intrínseco e dopado para aplicação em estruturas de barreira dupla
- Improved interfaces quality of a-Si:H/a-Si1-xCx:H multilayers
- Highly ordered amosphous silicon-carbon alloys obtained by RF PECVD
- Microvoids in diamond-like amorphous silicon carbide
- Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers
- X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling
- Low microvoid density wide gap amorphous silicon carbide
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