In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs (2015)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; SOUZA, MÁRCIO ALVES SODRÉ DE - EP
- Unidade: EP
- DOI: 10.1016/j.mee.2015.04.056
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Source:
- Título: Microelectronic Engineering
- Volume/Número/Paginação/Ano: v. 147, n. 1, p. 92-95, Nov 2015
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
DORIA, Rodrigo Trevisoli et al. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs. Microelectronic Engineering, v. 147, n. 1, p. 92-95, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2015.04.056. Acesso em: 10 jan. 2026. -
APA
Doria, R. T., Claeys, C., Simoen, E., Souza, M. A. S. de, & Martino, J. A. (2015). In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs. Microelectronic Engineering, 147( 1), 92-95. doi:10.1016/j.mee.2015.04.056 -
NLM
Doria RT, Claeys C, Simoen E, Souza MAS de, Martino JA. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs [Internet]. Microelectronic Engineering. 2015 ; 147( 1): 92-95.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.mee.2015.04.056 -
Vancouver
Doria RT, Claeys C, Simoen E, Souza MAS de, Martino JA. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs [Internet]. Microelectronic Engineering. 2015 ; 147( 1): 92-95.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1016/j.mee.2015.04.056 - Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime
- Efeito da tensão mecânica no ruído de baixa frequência de transistores SOI planares e tridimensionais
- TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
- Carriers mobility extraction methods for triple-gate FinFET
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
- The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics
Informações sobre o DOI: 10.1016/j.mee.2015.04.056 (Fonte: oaDOI API)
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