Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime (2012)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP ; SOUZA, MÁRCIO ALVES SODRÉ DE - EP
- Unidade: EP
- DOI: 10.1149/04901.0077ecst
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2012
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOUZA, Marcio Alves Sodré de et al. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0077ecst. Acesso em: 18 fev. 2026. -
APA
Souza, M. A. S. de, Doria, R. T., Souza, M. de, Martino, J. A., & Pavanello, M. A. (2012). Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0077ecst -
NLM
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2026 fev. 18 ] Available from: https://doi.org/10.1149/04901.0077ecst -
Vancouver
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2026 fev. 18 ] Available from: https://doi.org/10.1149/04901.0077ecst - In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs
- Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
- Analysis on GC SOI MOSFET analog parameters at high temperatures
- Operation of double gate graded-channel transistors at low temperatures
- Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
- Analog performance of graded-channel SOI NMOSFETS at low temperatures
- A simple analytical model of graded-channel SOI nMOSFET transconductance
- Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
- Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
- Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs
Informações sobre o DOI: 10.1149/04901.0077ecst (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
3142063.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
