Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction (1999)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/s0038-1101(99)00191-4
- Assunto: CIRCUITOS INTEGRADOS MOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid-State Electronics
- ISSN: 0038-1101
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00191-4. Acesso em: 15 fev. 2026. -
APA
Sonnenberg, V., & Martino, J. A. (1999). Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics. doi:10.1016/s0038-1101(99)00191-4 -
NLM
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2026 fev. 15 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4 -
Vancouver
Sonnenberg V, Martino JA. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction [Internet]. Solid-State Electronics. 1999 ;[citado 2026 fev. 15 ] Available from: https://doi.org/10.1016/s0038-1101(99)00191-4 - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
Informações sobre o DOI: 10.1016/s0038-1101(99)00191-4 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
