A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 1997
- ISBN: 1-56677-176-5
- Source:
- Título do periódico: 3. Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: 3. Symposium on Silicon-on-Insulator Technology and Devices[S.l: s.n.], 1997. -
APA
Pavanello, M. A., & Martino, J. A. (1997). A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society. -
NLM
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. -
Vancouver
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
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