Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs (2004)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- Source:
- Conference titles: Symposium on High Purity Silicon
-
ABNT
MARTINO, João Antonio et al. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. 8. Symposium on High Purity Silicon: proceedings. Tradução . Pennington: The Electrochemical Society, 2004. . . Acesso em: 14 jan. 2026. -
APA
Martino, J. A., Rafi, J. M., Mercha, A., Simoen, E., & Claeys, C. (2004). Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society. -
NLM
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2026 jan. 14 ] -
Vancouver
Martino JA, Rafi JM, Mercha A, Simoen E, Claeys C. Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs. In: 8. Symposium on High Purity Silicon: proceedings. Pennington: The Electrochemical Society; 2004. [citado 2026 jan. 14 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
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