Oxygen plasma etching mechanisms of resist (2004)
- Autor:
- Autor USP: VERDONCK, PATRICK BERNARD - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
VERDONCK, Patrick Bernard. Oxygen plasma etching mechanisms of resist. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 26 jan. 2026. -
APA
Verdonck, P. B. (2004). Oxygen plasma etching mechanisms of resist. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 jan. 26 ] -
Vancouver
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 jan. 26 ] - The influence of diffusion of fluorine compounds for silicon lateral etching
- RF electrical measurements in plasma processing reactors
- Aluminium etching with CC14-N2 plasma
- Corrosão por plasma de espaçadores em óxido de silício
- Reactive ion etching and plasma etching of tungsten
- A new mechanism for silicon etching with fluorine based plasmas
- Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering
- Plasma parameters obtained with planar probe and optical emission spectroscopy
- The effect of electrode materials on etching mechanisms
- Contamination caused by reactive ion etching plasmas and subsequent cleaning procedures
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