The effect of electrode materials on etching mechanisms (2001)
- Authors:
- Autor USP: VERDONCK, PATRICK BERNARD - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: International Symposium on Plasma Chemistry
-
ABNT
RUAS, Ronaldo et al. The effect of electrode materials on etching mechanisms. 2001, Anais.. Orleans: ISPC, 2001. . Acesso em: 26 jan. 2026. -
APA
Ruas, R., Verdonck, P. B., Mansano, R. D., & Braithwaite, N. (2001). The effect of electrode materials on etching mechanisms. In Proceedings. Orleans: ISPC. -
NLM
Ruas R, Verdonck PB, Mansano RD, Braithwaite N. The effect of electrode materials on etching mechanisms. Proceedings. 2001 ;[citado 2026 jan. 26 ] -
Vancouver
Ruas R, Verdonck PB, Mansano RD, Braithwaite N. The effect of electrode materials on etching mechanisms. Proceedings. 2001 ;[citado 2026 jan. 26 ] - The influence of diffusion of fluorine compounds for silicon lateral etching
- RF electrical measurements in plasma processing reactors
- Oxygen plasma etching mechanisms of resist
- Aluminium etching with CC14-N2 plasma
- Corrosão por plasma de espaçadores em óxido de silício
- Reactive ion etching and plasma etching of tungsten
- A new mechanism for silicon etching with fluorine based plasmas
- Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering
- Plasma parameters obtained with planar probe and optical emission spectroscopy
- Contamination caused by reactive ion etching plasmas and subsequent cleaning procedures
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