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Trabalho de evento
Analytical model for cylindrical junctionless nanowire FETs (2024)
Souza, Adelcio Marques de; Celino, Daniel Ricardo; Ragi, Regiane; Romero, Murilo Araujo
Conference titles: IEEE Latin American Symposium on Circuits and Systems - LASCAS. Unidade: EESC
Subjects: TRANSISTORES, CIRCUITOS INTEGRADOS, NANOTECNOLOGIA, ENGENHARIA MECÂNICA
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ABNT
SOUZA, Adelcio Marques de et al. Analytical model for cylindrical junctionless nanowire FETs. 2024, Anais.. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2024. Disponível em: http://dx.doi.org/10.1109/LASCAS60203.2024.10506187. Acesso em: 15 set. 2024.
APA
Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2024). Analytical model for cylindrical junctionless nanowire FETs. In . Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/LASCAS60203.2024.10506187
NLM
Souza AM de, Celino DR, Ragi R, Romero MA. Analytical model for cylindrical junctionless nanowire FETs [Internet]. 2024 ;[citado 2024 set. 15 ] Available from: http://dx.doi.org/10.1109/LASCAS60203.2024.10506187
Vancouver
Souza AM de, Celino DR, Ragi R, Romero MA. Analytical model for cylindrical junctionless nanowire FETs [Internet]. 2024 ;[citado 2024 set. 15 ] Available from: http://dx.doi.org/10.1109/LASCAS60203.2024.10506187
Trabalho de evento
Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)
Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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ABNT
ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 15 set. 2024.
APA
Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603
NLM
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Vancouver
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Trabalho de evento
Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms (2023)
Canales, Bruno Godoy; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
CANALES, Bruno Godoy e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302593. Acesso em: 15 set. 2024.
APA
Canales, B. G., Martino, J. A., & Agopian, P. G. D. (2023). Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302593
NLM
Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
Vancouver
Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
Trabalho de evento
Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)
Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 15 set. 2024.
APA
Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644
NLM
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Vancouver
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Trabalho de evento
Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 15 set. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Trabalho de evento
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 15 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Trabalho de evento
Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors (2023)
Souto, Rayana Carvalho de Barros; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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ABNT
SOUTO, Rayana Carvalho de Barros e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302596. Acesso em: 15 set. 2024.
APA
Souto, R. C. de B., Martino, J. A., & Agopian, P. G. D. (2023). Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302596
NLM
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Vancouver
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Trabalho de evento
Nanowire TFET with different source compositions applied to low-dropout voltage regulator (2022)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Nanowire TFET with different source compositions applied to low-dropout voltage regulator. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881035. Acesso em: 15 set. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2022). Nanowire TFET with different source compositions applied to low-dropout voltage regulator. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881035
NLM
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Trabalho de evento
Experimental analysis of MISHEMT multiple conductions from 200K to 450K (2022)
Perina, Welder Fernandes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA
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ABNT
PERINA, Welder Fernandes e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Experimental analysis of MISHEMT multiple conductions from 200K to 450K. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881049. Acesso em: 15 set. 2024.
APA
Perina, W. F., Martino, J. A., & Agopian, P. G. D. (2022). Experimental analysis of MISHEMT multiple conductions from 200K to 450K. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881049
NLM
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Vancouver
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Trabalho de evento
Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET (2022)
Carvalho, Henrique Lanfredi; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Yojo, Leonardo Shimizu; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, DISPOSITIVOS ELETRÔNICOS, ALUMÍNIO, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
CARVALHO, Henrique Lanfredi et al. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9880960. Acesso em: 15 set. 2024.
APA
Carvalho, H. L., Rangel, R. C., Sasaki, K. R. A., Agopian, P. G. D., Yojo, L. S., & Martino, J. A. (2022). Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9880960
NLM
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Vancouver
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Trabalho de evento
Fabrication and electrical characterization of ISFET for H2O2 sensing (2022)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO
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ABNT
DUARTE, Pedro Henrique et al. Fabrication and electrical characterization of ISFET for H2O2 sensing. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881031. Acesso em: 15 set. 2024.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2022). Fabrication and electrical characterization of ISFET for H2O2 sensing. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881031
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. Fabrication and electrical characterization of ISFET for H2O2 sensing [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881031
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. Fabrication and electrical characterization of ISFET for H2O2 sensing [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881031
Trabalho de evento
New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects (2019)
Guazzelli, Marcilei A ; Bôas, Alexis Cristiano Vilas; Melo, M A A de; Santos, R B B; Giacomini, R C; Seixas, L E; Medina, Nilberto Heder
Source: Abstracts. Conference titles: Reunião de Trabalho sobre Física Nuclear no Brasil. Unidade: IF
Assunto: TRANSISTORES
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ABNT
GUAZZELLI, Marcilei A et al. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. 2019, Anais.. São Paulo: Sociedade Brasileira de Física, 2019. . Acesso em: 15 set. 2024.
APA
Guazzelli, M. A., Bôas, A. C. V., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R. C., Seixas, L. E., & Medina, N. H. (2019). New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. In Abstracts. São Paulo: Sociedade Brasileira de Física.
NLM
Guazzelli MA, Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Seixas LE, Medina NH. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. Abstracts. 2019 ;[citado 2024 set. 15 ]
Vancouver
Guazzelli MA, Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Seixas LE, Medina NH. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. Abstracts. 2019 ;[citado 2024 set. 15 ]
Trabalho de evento
Production of p- and n-channel OFETs using the inkjet printing technique aiming the application at logic gates (2018)
Matos, João Henrique Rocha; Stefanelo, Josiani Cristina; Faria, Roberto Mendonça
Source: Livro de resumos. Conference titles: Simpósio em Ciência e Engenharia de Materiais - SICEM. Unidades: IFSC, EESC
Subjects: TRANSISTORES, SEMICONDUTORES, DIELÉTRICOS, POLÍMEROS (MATERIAIS)
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ABNT
MATOS, João Henrique Rocha e STEFANELO, Josiani Cristina e FARIA, Roberto Mendonça. Production of p- and n-channel OFETs using the inkjet printing technique aiming the application at logic gates. 2018, Anais.. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC, 2018. Disponível em: http://soac.eesc.usp.br/index.php/SICEM/sicem2018/paper/view/1223/918. Acesso em: 15 set. 2024.
APA
Matos, J. H. R., Stefanelo, J. C., & Faria, R. M. (2018). Production of p- and n-channel OFETs using the inkjet printing technique aiming the application at logic gates. In Livro de resumos. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC. Recuperado de http://soac.eesc.usp.br/index.php/SICEM/sicem2018/paper/view/1223/918
NLM
Matos JHR, Stefanelo JC, Faria RM. Production of p- and n-channel OFETs using the inkjet printing technique aiming the application at logic gates [Internet]. Livro de resumos. 2018 ;[citado 2024 set. 15 ] Available from: http://soac.eesc.usp.br/index.php/SICEM/sicem2018/paper/view/1223/918
Vancouver
Matos JHR, Stefanelo JC, Faria RM. Production of p- and n-channel OFETs using the inkjet printing technique aiming the application at logic gates [Internet]. Livro de resumos. 2018 ;[citado 2024 set. 15 ] Available from: http://soac.eesc.usp.br/index.php/SICEM/sicem2018/paper/view/1223/918
Trabalho de evento
Probing electric-fields within organic devices using sum-frequency generation (SFG) (2017)
Gomes, D. J. C.; Motti, S. G.; Miranda, Paulo Barbeitas
Source: Anais eletrônicos. Conference titles: Simpósio em Ciência e Engenharia de Materiais - SICEM. Unidade: IFSC
Subjects: TRANSISTORES, DIELÉTRICOS
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ABNT
GOMES, D. J. C. e MOTTI, S. G. e MIRANDA, Paulo Barbeitas. Probing electric-fields within organic devices using sum-frequency generation (SFG). 2017, Anais.. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC, 2017. Disponível em: http://www.eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/855/455. Acesso em: 15 set. 2024.
APA
Gomes, D. J. C., Motti, S. G., & Miranda, P. B. (2017). Probing electric-fields within organic devices using sum-frequency generation (SFG). In Anais eletrônicos. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC. Recuperado de http://www.eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/855/455
NLM
Gomes DJC, Motti SG, Miranda PB. Probing electric-fields within organic devices using sum-frequency generation (SFG) [Internet]. Anais eletrônicos. 2017 ;[citado 2024 set. 15 ] Available from: http://www.eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/855/455
Vancouver
Gomes DJC, Motti SG, Miranda PB. Probing electric-fields within organic devices using sum-frequency generation (SFG) [Internet]. Anais eletrônicos. 2017 ;[citado 2024 set. 15 ] Available from: http://www.eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/855/455
Trabalho de evento
Production of p-channel OFETs using the inkjet printing technique aiming the application at logic gates (2017)
Matos, J. H. R.; Stefanelo, J. C.; Faria, Roberto Mendonça
Source: Anais eletrônicos. Conference titles: Simpósio em Ciência e Engenharia de Materiais - SICEM. Unidade: IFSC
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
MATOS, J. H. R. e STEFANELO, J. C. e FARIA, Roberto Mendonça. Production of p-channel OFETs using the inkjet printing technique aiming the application at logic gates. 2017, Anais.. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC, 2017. Disponível em: http://eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/872/469. Acesso em: 15 set. 2024.
APA
Matos, J. H. R., Stefanelo, J. C., & Faria, R. M. (2017). Production of p-channel OFETs using the inkjet printing technique aiming the application at logic gates. In Anais eletrônicos. São Carlos: Universidade de São Paulo - USP, Escola de Engenharia de São Carlos - EESC. Recuperado de http://eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/872/469
NLM
Matos JHR, Stefanelo JC, Faria RM. Production of p-channel OFETs using the inkjet printing technique aiming the application at logic gates [Internet]. Anais eletrônicos. 2017 ;[citado 2024 set. 15 ] Available from: http://eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/872/469
Vancouver
Matos JHR, Stefanelo JC, Faria RM. Production of p-channel OFETs using the inkjet printing technique aiming the application at logic gates [Internet]. Anais eletrônicos. 2017 ;[citado 2024 set. 15 ] Available from: http://eventos.eesc.usp.br/index.php/SICEM/xviiisicem/paper/view/872/469
Trabalho de evento
Using sum-frequency generation (SFG) to probe electric-fields within organic field-effect transistors (2016)
Gomes, Douglas J. C.; Motti, Silvia G.; Miranda, Paulo Barbeitas
Source: Proceedings. Conference titles: International Conference on Photonics, Optics and Laser Technology - PHOTOPTICS. Unidade: IFSC
Subjects: TRANSISTORES, CAMPO ELETROMAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, Douglas J. C. e MOTTI, Silvia G. e MIRANDA, Paulo Barbeitas. Using sum-frequency generation (SFG) to probe electric-fields within organic field-effect transistors. 2016, Anais.. Setúbal: Science and Technology Publications - SCITEPRESS, 2016. Disponível em: https://doi.org/10.5220/0005812801920196. Acesso em: 15 set. 2024.
APA
Gomes, D. J. C., Motti, S. G., & Miranda, P. B. (2016). Using sum-frequency generation (SFG) to probe electric-fields within organic field-effect transistors. In Proceedings. Setúbal: Science and Technology Publications - SCITEPRESS. doi:10.5220/0005812801920196
NLM
Gomes DJC, Motti SG, Miranda PB. Using sum-frequency generation (SFG) to probe electric-fields within organic field-effect transistors [Internet]. Proceedings. 2016 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.5220/0005812801920196
Vancouver
Gomes DJC, Motti SG, Miranda PB. Using sum-frequency generation (SFG) to probe electric-fields within organic field-effect transistors [Internet]. Proceedings. 2016 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.5220/0005812801920196
Trabalho de evento
A procedure to analyze the impact of three-phase unbalanced conditions on switching overvoltages in systems with distributed generation (2015)
Otremba, Liciane; Pesente, Jonas Roberto; Otto, Rodrigo Bueno; Ramos, Rodrigo Andrade
Conference titles: IEEE PES General Meeting. Unidade: EESC
Subjects: DISTRIBUIÇÃO DE ENERGIA ELÉTRICA, TRANSISTORES, ENERGIA ELÉTRICA (QUALIDADE)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OTREMBA, Liciane et al. A procedure to analyze the impact of three-phase unbalanced conditions on switching overvoltages in systems with distributed generation. 2015, Anais.. Piscataway, NJ: IEEE, 2015. Disponível em: https://doi.org/10.1109/PESGM.2015.7286379. Acesso em: 15 set. 2024.
APA
Otremba, L., Pesente, J. R., Otto, R. B., & Ramos, R. A. (2015). A procedure to analyze the impact of three-phase unbalanced conditions on switching overvoltages in systems with distributed generation. In . Piscataway, NJ: IEEE. doi:10.1109/PESGM.2015.7286379
NLM
Otremba L, Pesente JR, Otto RB, Ramos RA. A procedure to analyze the impact of three-phase unbalanced conditions on switching overvoltages in systems with distributed generation [Internet]. 2015 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/PESGM.2015.7286379
Vancouver
Otremba L, Pesente JR, Otto RB, Ramos RA. A procedure to analyze the impact of three-phase unbalanced conditions on switching overvoltages in systems with distributed generation [Internet]. 2015 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/PESGM.2015.7286379
Trabalho de evento
A novel low cost power converter topology for active power injection in low voltage monophasic power line from fuel cells (2014)
Monteiro, José Roberto Boffino de Almeida; Aguiar, Manoel Luis de; Paula, Geyverson Teixeira de; Oliveira Júnior, Azauri Albano de; Gonçalves Neto, Luiz; Altafim, Ruy Alberto Corrêa
Conference titles: Annual IEEE Applied Power Electronics Conference and Exposition - APEC. Unidade: EESC
Subjects: CONVERSORES ELÉTRICOS, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MONTEIRO, José Roberto Boffino de Almeida et al. A novel low cost power converter topology for active power injection in low voltage monophasic power line from fuel cells. 2014, Anais.. Piscataway: IEEE, 2014. Disponível em: https://doi.org/10.1109/APEC.2014.6803755. Acesso em: 15 set. 2024.
APA
Monteiro, J. R. B. de A., Aguiar, M. L. de, Paula, G. T. de, Oliveira Júnior, A. A. de, Gonçalves Neto, L., & Altafim, R. A. C. (2014). A novel low cost power converter topology for active power injection in low voltage monophasic power line from fuel cells. In . Piscataway: IEEE. doi:10.1109/APEC.2014.6803755
NLM
Monteiro JRB de A, Aguiar ML de, Paula GT de, Oliveira Júnior AA de, Gonçalves Neto L, Altafim RAC. A novel low cost power converter topology for active power injection in low voltage monophasic power line from fuel cells [Internet]. 2014 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/APEC.2014.6803755
Vancouver
Monteiro JRB de A, Aguiar ML de, Paula GT de, Oliveira Júnior AA de, Gonçalves Neto L, Altafim RAC. A novel low cost power converter topology for active power injection in low voltage monophasic power line from fuel cells [Internet]. 2014 ;[citado 2024 set. 15 ] Available from: https://doi.org/10.1109/APEC.2014.6803755
Trabalho de evento
On the modelling of the C-V characteristics of semiconductor nanowire transistors (2010)
Nobrega, Rafael Vinicius Tayette da; Ragi, Regiane; Romero, Murilo Araujo
Source: Proceedings. Conference titles: Argentine School of Micro-Nanoelectronics, Technology and Applications. Unidade: EESC
Subjects: TRANSISTORES, EQUAÇÕES NÃO LINEARES, PROCESSOS DE POISSON
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NOBREGA, Rafael Vinicius Tayette da e RAGI, Regiane e ROMERO, Murilo Araujo. On the modelling of the C-V characteristics of semiconductor nanowire transistors. 2010, Anais.. Montevideo: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2010. Disponível em: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376. Acesso em: 15 set. 2024.
APA
Nobrega, R. V. T. da, Ragi, R., & Romero, M. A. (2010). On the modelling of the C-V characteristics of semiconductor nanowire transistors. In Proceedings. Montevideo: Escola de Engenharia de São Carlos, Universidade de São Paulo. Recuperado de http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376
NLM
Nobrega RVT da, Ragi R, Romero MA. On the modelling of the C-V characteristics of semiconductor nanowire transistors [Internet]. Proceedings. 2010 ;[citado 2024 set. 15 ] Available from: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376
Vancouver
Nobrega RVT da, Ragi R, Romero MA. On the modelling of the C-V characteristics of semiconductor nanowire transistors [Internet]. Proceedings. 2010 ;[citado 2024 set. 15 ] Available from: http://ieeexplore.ieee.org/stamp/stamp.do?tp=&arnumber=5606376
Trabalho de evento
Wear mode transition during the micro-scale abrasion of WC-Co P20 and M2 tool sttel (2005)
Cozza, Ronaldo Câmara ; Souza, Roberto Martins de ; Tanaka, Deniol Katsuki
Source: COBEM 2005 : proceedings. Conference titles: International Congress of Mechanical Engineering. Unidade: EP
Subjects: DESGASTE ABRASIVO, RESISTÊNCIA DOS MATERIAIS, FERRAMENTAS, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
COZZA, Ronaldo Câmara e SOUZA, Roberto Martins de e TANAKA, Deniol Katsuki. Wear mode transition during the micro-scale abrasion of WC-Co P20 and M2 tool sttel. 2005, Anais.. Rio de Janeiro: ABCM, 2005. Disponível em: https://repositorio.usp.br/directbitstream/9e84da09-3be7-4d07-9610-39953deb4fa6/Tanaka-2005-WEAR%20MODE%20TRANSITION%20DURING%20THE%20MICRO-SCALE%20ABRASION%20OF.pdf. Acesso em: 15 set. 2024.
APA
Cozza, R. C., Souza, R. M. de, & Tanaka, D. K. (2005). Wear mode transition during the micro-scale abrasion of WC-Co P20 and M2 tool sttel. In COBEM 2005 : proceedings. Rio de Janeiro: ABCM. Recuperado de https://repositorio.usp.br/directbitstream/9e84da09-3be7-4d07-9610-39953deb4fa6/Tanaka-2005-WEAR%20MODE%20TRANSITION%20DURING%20THE%20MICRO-SCALE%20ABRASION%20OF.pdf
NLM
Cozza RC, Souza RM de, Tanaka DK. Wear mode transition during the micro-scale abrasion of WC-Co P20 and M2 tool sttel [Internet]. COBEM 2005 : proceedings. 2005 ;[citado 2024 set. 15 ] Available from: https://repositorio.usp.br/directbitstream/9e84da09-3be7-4d07-9610-39953deb4fa6/Tanaka-2005-WEAR%20MODE%20TRANSITION%20DURING%20THE%20MICRO-SCALE%20ABRASION%20OF.pdf
Vancouver
Cozza RC, Souza RM de, Tanaka DK. Wear mode transition during the micro-scale abrasion of WC-Co P20 and M2 tool sttel [Internet]. COBEM 2005 : proceedings. 2005 ;[citado 2024 set. 15 ] Available from: https://repositorio.usp.br/directbitstream/9e84da09-3be7-4d07-9610-39953deb4fa6/Tanaka-2005-WEAR%20MODE%20TRANSITION%20DURING%20THE%20MICRO-SCALE%20ABRASION%20OF.pdf

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