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Filtros : "Journal of Applied Physics" "Zanatta, Antonio Ricardo" Limpar

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  • Artigo de periodico

    An alternative experimental approach to produce rare-earth-doped SiOx films (2016)

    Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA

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      ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 08 nov. 2025.

    • APA

      Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677

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      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677

    • Vancouver

      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677

  • Artigo de periodico

    Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)

    Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS

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      SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 08 nov. 2025.

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      Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809

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      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809

    • Vancouver

      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4921809

  • Artigo de periodico

    On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)

    Zanatta, Antonio Ricardo ; Kordesch, M. E.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

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      ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 08 nov. 2025.

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      Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654

    • NLM

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4893654

    • Vancouver

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4893654

  • Artigo de periodico

    Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)

    Zanatta, Antonio Ricardo ; Ingram, D. C.; Kordesch, M. E.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

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      ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 08 nov. 2025.

    • APA

      Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589

    • NLM

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4896589

    • Vancouver

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4896589

  • Artigo de periodico

    A simple-versatile approach to achieve all-Si-based optical micro-cavities (2013)

    Gallo, I. B.; Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, ÓPTICA, SILÍCIO

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      GALLO, I. B. e ZANATTA, Antonio Ricardo. A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, v. 113, n. 8, p. 083106-1-083106-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4793592. Acesso em: 08 nov. 2025.

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      Gallo, I. B., & Zanatta, A. R. (2013). A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, 113( 8), 083106-1-083106-7. doi:10.1063/1.4793592

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      Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4793592

    • Vancouver

      Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4793592

  • Trabalho de evento-anais periodico

    Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering (2012)

    Pereira, André L. J.; Lisboa Filho, Paulo N.; Acuña, Javier; Brandt, Iuri S.; Pasa, André A.; Zanatta, Antonio Ricardo ; Vilcarromero, Johnny; Beltrán, Armando; Silva, José H. Dias da

    Source: Journal of Applied Physics. Conference titles: International Conference on the Study of Matter at Extreme Conditions - SMEC. Unidade: IFSC

    Subjects: OXIGÊNIO (FLUXO), ÓPTICA, FILMES FINOS

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      PEREIRA, André L. J. et al. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.4724334. Acesso em: 08 nov. 2025. , 2012

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      Pereira, A. L. J., Lisboa Filho, P. N., Acuña, J., Brandt, I. S., Pasa, A. A., Zanatta, A. R., et al. (2012). Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. doi:10.1063/1.4724334

    • NLM

      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4724334

    • Vancouver

      Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4724334

  • Artigo de periodico

    Visible light emission and energy transfer processes in 'SM'-doped nitride films (2012)

    Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ENERGIA (TRANSFERÊNCIA), ÍONS, ÉRBIO, EMISSÃO DA LUZ

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      ZANATTA, Antonio Ricardo. Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, v. 111, n. Ju 2012, p. 123105-1-123105-8, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4729911. Acesso em: 08 nov. 2025.

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      Zanatta, A. R. (2012). Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, 111( Ju 2012), 123105-1-123105-8. doi:10.1063/1.4729911

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      Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4729911

    • Vancouver

      Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4729911

  • Artigo de periodico

    Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes (2011)

    Acuña, J. J. S.; Escobar, M.; Goyanes, S. N.; Candal, R. J.; Zanatta, Antonio Ricardo ; Alvarez, F.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, NANOTECNOLOGIA, NANOPARTÍCULAS, ESPECTROSCOPIA

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      ACUÑA, J. J. S. et al. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, v. 109, n. 11, p. 114317-1-114317-7, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3593269. Acesso em: 08 nov. 2025.

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      Acuña, J. J. S., Escobar, M., Goyanes, S. N., Candal, R. J., Zanatta, A. R., & Alvarez, F. (2011). Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, 109( 11), 114317-1-114317-7. doi:10.1063/1.3593269

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      Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3593269

    • Vancouver

      Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3593269

  • Artigo de periodico

    Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films (2010)

    Ferri, F. A.; Silva, Marcelo de Assumpção Pereira da ; Zanatta, Antonio Ricardo ; Varella, A. L. S.; Oliveira, A. J. A.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, MAGNETISMO (PROPRIEDADES), FILMES FINOS

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      FERRI, F. A. et al. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, v. 108, n. 11, p. 113922-1-113922-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3520661. Acesso em: 08 nov. 2025.

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      Ferri, F. A., Silva, M. de A. P. da, Zanatta, A. R., Varella, A. L. S., & Oliveira, A. J. A. (2010). Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, 108( 11), 113922-1-113922-5. doi:10.1063/1.3520661

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      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3520661

    • Vancouver

      Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3520661

  • Artigo de periodico

    Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)

    Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS

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      FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 08 nov. 2025.

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      Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457

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      Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2955457

    • Vancouver

      Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2955457

  • Artigo de periodico

    Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)

    Zanatta, Antonio Ricardo ; Ferri, Fabio Aparecido

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR

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      ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 08 nov. 2025.

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      Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823

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      Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2770823

    • Vancouver

      Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2770823

  • Artigo de periodico

    Thermally synthesized ruby microstructures and luminescence centers (2006)

    Zanatta, Antonio Ricardo ; Ribeiro, Cristina Tereza Monteiro; Jahn, U.; Aldabergenova, S. B.; Strunk, H. P.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, LUMINESCÊNCIA

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      ZANATTA, Antonio Ricardo et al. Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, v. 100, n. 9, p. 113112-1-113112-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2393009. Acesso em: 08 nov. 2025.

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      Zanatta, A. R., Ribeiro, C. T. M., Jahn, U., Aldabergenova, S. B., & Strunk, H. P. (2006). Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, 100( 9), 113112-1-113112-7. doi:10.1063/1.2393009

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      Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2393009

    • Vancouver

      Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2393009

  • Artigo de periodico

    Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)

    Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo ; Chambouleyron, I.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA

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      FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 08 nov. 2025.

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      Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877

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      Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2362877

    • Vancouver

      Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2362877

  • Artigo de periodico

    Optoelectronic and structural characteristics of Er-doped amorphous AIN films (2005)

    Zanatta, Antonio Ricardo ; Ribeiro, Cristina Teresa M.; Jahn, U.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, SILICONE, FILMES FINOS

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      ZANATTA, Antonio Ricardo e RIBEIRO, Cristina Teresa M. e JAHN, U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, v. No 2005, n. 9, p. 093514-1-093514-8, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2127120. Acesso em: 08 nov. 2025.

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      Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2005). Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, No 2005( 9), 093514-1-093514-8. doi:10.1063/1.2127120

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      Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2127120

    • Vancouver

      Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2127120

  • Artigo de periodico

    Low-temperature Al-induced crystallization of amorphous Ge (2005)

    Zanatta, Antonio Ricardo ; Chambouleyron, I.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA, SEMICONDUTORES, FILMES FINOS

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    • ABNT

      ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, v. 97, n. 11, p. 094914-1-094914-11, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1889227. Acesso em: 08 nov. 2025.

    • APA

      Zanatta, A. R., & Chambouleyron, I. (2005). Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, 97( 11), 094914-1-094914-11. doi:10.1063/1.1889227

    • NLM

      Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1889227

    • Vancouver

      Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1889227

  • Artigo de periodico

    Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films (2004)

    Zanatta, Antonio Ricardo ; Ribeiro, C. T. M.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, LASER, LUMINESCÊNCIA, TERRAS RARAS

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    • ABNT

      ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films. Journal of Applied Physics, v. 96, n. 11, p. 5977-5981, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1794363. Acesso em: 08 nov. 2025.

    • APA

      Zanatta, A. R., & Ribeiro, C. T. M. (2004). Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films. Journal of Applied Physics, 96( 11), 5977-5981. doi:10.1063/1.1794363

    • NLM

      Zanatta AR, Ribeiro CTM. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films [Internet]. Journal of Applied Physics. 2004 ; 96( 11): 5977-5981.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1794363

    • Vancouver

      Zanatta AR, Ribeiro CTM. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films [Internet]. Journal of Applied Physics. 2004 ; 96( 11): 5977-5981.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1794363

  • Artigo de periodico

    Spectroscopic study of Nd-doped amorphous SiN films (2004)

    Ribeiro, C. T. M.; Siu Li, Máximo ; Zanatta, Antonio Ricardo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, ESPECTROSCOPIA RAMAN

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    • ABNT

      RIBEIRO, C. T. M. e SIU LI, Máximo e ZANATTA, Antonio Ricardo. Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, v. 96, n. 2, p. 1068-1073, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1760843. Acesso em: 08 nov. 2025.

    • APA

      Ribeiro, C. T. M., Siu Li, M., & Zanatta, A. R. (2004). Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, 96( 2), 1068-1073. doi:10.1063/1.1760843

    • NLM

      Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1760843

    • Vancouver

      Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1760843

  • Artigo de periodico

    X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films (2003)

    Zanatta, Antonio Ricardo ; Ribeiro, C. T. M.; Alvarez, F.

    Source: Journal of Applied Physics. Unidade: IFSC

    Assunto: FÍSICA DA MATÉRIA CONDENSADA

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    • ABNT

      ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e ALVAREZ, F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films. Journal of Applied Physics, v. 93, n. 4, p. 1948-1953, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1536015. Acesso em: 08 nov. 2025.

    • APA

      Zanatta, A. R., Ribeiro, C. T. M., & Alvarez, F. (2003). X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films. Journal of Applied Physics, 93( 4), 1948-1953. doi:10.1063/1.1536015

    • NLM

      Zanatta AR, Ribeiro CTM, Alvarez F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films [Internet]. Journal of Applied Physics. 2003 ; 93( 4): 1948-1953.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1536015

    • Vancouver

      Zanatta AR, Ribeiro CTM, Alvarez F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films [Internet]. Journal of Applied Physics. 2003 ; 93( 4): 1948-1953.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1536015

  • Artigo de periodico-carta/editorial

    Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)] (2002)

    Zanatta, Antonio Ricardo ; Ribeiro, C T M; Alvarez, F

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FILMES FINOS, FÍSICA DA MATÉRIA CONDENSADA

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    • ABNT

      ZANATTA, Antonio Ricardo e RIBEIRO, C T M e ALVAREZ, F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 08 nov. 2025. , 2002

    • APA

      Zanatta, A. R., Ribeiro, C. T. M., & Alvarez, F. (2002). Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo.

    • NLM

      Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2025 nov. 08 ]

    • Vancouver

      Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2025 nov. 08 ]

  • Artigo de periodico

    Laser interference structuring of a-Ge films on GaAs (2002)

    Santos, P V; Zanatta, Antonio Ricardo ; Jahn, U; Trampert, A; Dondeo, F; Chambouleyron, Ivan

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR

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    • ABNT

      SANTOS, P V et al. Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, v. 91, n. 5, p. 2916-2920, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1448674. Acesso em: 08 nov. 2025.

    • APA

      Santos, P. V., Zanatta, A. R., Jahn, U., Trampert, A., Dondeo, F., & Chambouleyron, I. (2002). Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, 91( 5), 2916-2920. doi:10.1063/1.1448674

    • NLM

      Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1448674

    • Vancouver

      Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1448674

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