Thermally synthesized ruby microstructures and luminescence centers (2006)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.2393009
- Subjects: FILMES FINOS; LUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 100, n. 9, p. 113112-1-113112-7, 2006
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo et al. Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, v. 100, n. 9, p. 113112-1-113112-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2393009. Acesso em: 18 abr. 2024. -
APA
Zanatta, A. R., Ribeiro, C. T. M., Jahn, U., Aldabergenova, S. B., & Strunk, H. P. (2006). Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, 100( 9), 113112-1-113112-7. doi:10.1063/1.2393009 -
NLM
Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.2393009 -
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1063/1.2393009 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1063/1.2393009 (Fonte: oaDOI API)
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