Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.2362877
- Subjects: ESPECTROSCOPIA RAMAN; FILMES FINOS; SILÍCIO; NÍQUEL; TEMPERATURA
- Language: Inglês
- Imprenta:
- Publisher: American Institute of Physics - AIP
- Publisher place: Melville
- Date published: 2006
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 100, n. 9, p. 094311-1-094311-7, Nov. 2006
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
FERRI, Fabio Aparecido; ZANATTA, Antonio Ricardo; CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, Melville, American Institute of Physics - AIP, v. No 2006, n. 9, p. 094311-1-094311-7, 2006. DOI: 10.1063/1.2362877. -
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877 -
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7. -
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7. - Whitish light-emitting ZnO micro-flakes: their production and optical properties
- X-ray photoelectron spectroscopy of amorphous A1N alloys prepared by reactive rf sputtering
- Photoluminescence of a-GeN alloys doped with different rare-earth ions
- Effect of Ga incorporation on photoinduced phenomena in Ge-S glasses
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
- Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices
- Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films
- Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing
- Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering
- Exponential depletion of neutral dangling bonds density ('D POT. 0') by rare-earth doping inamorphous 'SI' films
Informações sobre o DOI: 10.1063/1.2362877 (Fonte: oaDOI API)
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