Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing (2004)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: FOTOLUMINESCÊNCIA; ESPECTROSCOPIA RAMAN; MICROSCOPIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Vacuum Science and Technolohy B
- ISSN: 1071-1023
- Volume/Número/Paginação/Ano: v. 22, n. 4, p. 1669-1671, Jul./Aug. 2004
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ABNT
JACOBSOHN, L. G. e ZANATTA, Antonio Ricardo e NASTASI, M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, v. 22, n. 4, p. 1669-1671, 2004Tradução . . Acesso em: 26 dez. 2025. -
APA
Jacobsohn, L. G., Zanatta, A. R., & Nastasi, M. (2004). Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, 22( 4), 1669-1671. -
NLM
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2025 dez. 26 ] -
Vancouver
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2025 dez. 26 ] - Influence of the substrate on the growth of Co3O4 films deposited by reactive DC magnetron sputtering
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