Exponential absorption edge and disorder in Column IV amorphous semiconductors (1998)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.368768
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v. 84, n. 9, p. 5184-5190, 1998
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo e MULATO, M e CHAMBOULEYRON, I. Exponential absorption edge and disorder in Column IV amorphous semiconductors. Journal of Applied Physics, v. 84, n. 9, p. 5184-5190, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.368768. Acesso em: 19 abr. 2024. -
APA
Zanatta, A. R., Mulato, M., & Chambouleyron, I. (1998). Exponential absorption edge and disorder in Column IV amorphous semiconductors. Journal of Applied Physics, 84( 9), 5184-5190. doi:10.1063/1.368768 -
NLM
Zanatta AR, Mulato M, Chambouleyron I. Exponential absorption edge and disorder in Column IV amorphous semiconductors [Internet]. Journal of Applied Physics. 1998 ; 84( 9): 5184-5190.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.368768 -
Vancouver
Zanatta AR, Mulato M, Chambouleyron I. Exponential absorption edge and disorder in Column IV amorphous semiconductors [Internet]. Journal of Applied Physics. 1998 ; 84( 9): 5184-5190.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.368768 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1063/1.368768 (Fonte: oaDOI API)
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