Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.2955457
- Subjects: NÍQUEL; CRISTALIZAÇÃO; ESPECTROSCOPIA RAMAN; FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 104, n. 1, p. 013534-1-013534-5, July 2008
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 20 jan. 2026. -
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457 -
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1063/1.2955457 -
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1063/1.2955457 - Optical and micro-Raman characterizations of Co3O4 films aiming photovoltaic and photocatalytic applications
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Informações sobre o DOI: 10.1063/1.2955457 (Fonte: oaDOI API)
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