Temperature-dependent Raman scattering of the Ge + GeOx system and its potential as an optical thermometer (2020)
- Autor:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1016/j.rinp.2020.103500
- Subjects: ESPECTROSCOPIA RAMAN; FILMES FINOS
- Keywords: Oxide materials (GeOx); Raman scattering; Temperature sensing
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Results in Physics
- ISSN: 2211-3797
- Volume/Número/Paginação/Ano: v. 19, p. 103500-103500-9, Dec. 2020
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
ZANATTA, Antonio Ricardo. Temperature-dependent Raman scattering of the Ge + GeOx system and its potential as an optical thermometer. Results in Physics, v. 19, p. 103500-103500-9, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.rinp.2020.103500. Acesso em: 20 jan. 2026. -
APA
Zanatta, A. R. (2020). Temperature-dependent Raman scattering of the Ge + GeOx system and its potential as an optical thermometer. Results in Physics, 19, 103500-103500-9. doi:10.1016/j.rinp.2020.103500 -
NLM
Zanatta AR. Temperature-dependent Raman scattering of the Ge + GeOx system and its potential as an optical thermometer [Internet]. Results in Physics. 2020 ; 19 103500-103500-9.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.rinp.2020.103500 -
Vancouver
Zanatta AR. Temperature-dependent Raman scattering of the Ge + GeOx system and its potential as an optical thermometer [Internet]. Results in Physics. 2020 ; 19 103500-103500-9.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.rinp.2020.103500 - Optical and micro-Raman characterizations of Co3O4 films aiming photovoltaic and photocatalytic applications
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- A sensitive temperature probe based on Er3+-doped GeOx films
- Influence of the Anatase and Rutile phases on the luminescent properties of rare-earth-doped TiO2 films
- A fast-reliable methodology to estimate the concentration of rutile or anatase phases of TiO2
- Self-organized nickel nanoparticles on nanostructured silicon substrate intermediated by a titanium oxynitride (TiNxOy) interface
- AIN aloys prepared by reactive radio frequency sputtering
- Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
- Pulsed laser crystallization of Er-doped amorphous GeN films
Informações sobre o DOI: 10.1016/j.rinp.2020.103500 (Fonte: oaDOI API)
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