AIN aloys prepared by reactive radio frequency sputtering (2001)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
RIBEIRO, C. T. M. e ALVAREZ, F e ZANATTA, Antonio Ricardo. AIN aloys prepared by reactive radio frequency sputtering. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 23 abr. 2024. -
APA
Ribeiro, C. T. M., Alvarez, F., & Zanatta, A. R. (2001). AIN aloys prepared by reactive radio frequency sputtering. In Resumos. São Paulo: SBF. -
NLM
Ribeiro CTM, Alvarez F, Zanatta AR. AIN aloys prepared by reactive radio frequency sputtering. Resumos. 2001 ;[citado 2024 abr. 23 ] -
Vancouver
Ribeiro CTM, Alvarez F, Zanatta AR. AIN aloys prepared by reactive radio frequency sputtering. Resumos. 2001 ;[citado 2024 abr. 23 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
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