AIN aloys prepared by reactive radio frequency sputtering (2001)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
RIBEIRO, C. T. M. e ALVAREZ, F e ZANATTA, Antonio Ricardo. AIN aloys prepared by reactive radio frequency sputtering. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 20 jan. 2026. -
APA
Ribeiro, C. T. M., Alvarez, F., & Zanatta, A. R. (2001). AIN aloys prepared by reactive radio frequency sputtering. In Resumos. São Paulo: SBF. -
NLM
Ribeiro CTM, Alvarez F, Zanatta AR. AIN aloys prepared by reactive radio frequency sputtering. Resumos. 2001 ;[citado 2026 jan. 20 ] -
Vancouver
Ribeiro CTM, Alvarez F, Zanatta AR. AIN aloys prepared by reactive radio frequency sputtering. Resumos. 2001 ;[citado 2026 jan. 20 ] - Optical and micro-Raman characterizations of Co3O4 films aiming photovoltaic and photocatalytic applications
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- A fast-reliable methodology to estimate the concentration of rutile or anatase phases of TiO2
- Self-organized nickel nanoparticles on nanostructured silicon substrate intermediated by a titanium oxynitride (TiNxOy) interface
- Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
- Pulsed laser crystallization of Er-doped amorphous GeN films
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