Low-temperature Al-induced crystallization of amorphous Ge (2005)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.1889227
- Subjects: ESPECTROSCOPIA; SEMICONDUTORES; FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 97, n. 11, p. 094914-1-094914-11, May 2005
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, v. 97, n. 11, p. 094914-1-094914-11, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1889227. Acesso em: 19 abr. 2024. -
APA
Zanatta, A. R., & Chambouleyron, I. (2005). Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, 97( 11), 094914-1-094914-11. doi:10.1063/1.1889227 -
NLM
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.1889227 -
Vancouver
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1063/1.1889227 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1063/1.1889227 (Fonte: oaDOI API)
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