Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.4896589
- Subjects: NÍQUEL; SEMICONDUTORES; DIFRAÇÃO POR RAIOS X; CRISTALIZAÇÃO; FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2014
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 116, n. 12, p. 123508-1-123508-6, Sept. 2014
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 24 abr. 2024. -
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589 -
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.4896589 -
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.4896589 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
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Informações sobre o DOI: 10.1063/1.4896589 (Fonte: oaDOI API)
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