ReP USP - Resultado da busca

Parte de monografia/livro
A physically-based continuous model for graded-channel SOI MOSFET (2002)
Pavanello, Marcelo Antonio ; Iniguez, Benjamin; Martino, João Antonio ; Flandre, Denis
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. A physically-based continuous model for graded-channel SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous model for graded-channel SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Porous silicon sacrifical layers applied on micromechanical structures fabrication (2002)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva et al. Porous silicon sacrifical layers applied on micromechanical structures fabrication. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2002). Porous silicon sacrifical layers applied on micromechanical structures fabrication. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures (2002)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2002). Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes (2002)
Ferreira, Eduardo dos Santos; Morimoto, Nilton Itiro ; Carvalho, Ricardo Teixeira de
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
FERREIRA, Eduardo dos Santos e MORIMOTO, Nilton Itiro e CARVALHO, Ricardo Teixeira de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Ferreira, E. dos S., Morimoto, N. I., & Carvalho, R. T. de. (2002). Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Ferreira E dos S, Morimoto NI, Carvalho RT de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Ferreira E dos S, Morimoto NI, Carvalho RT de. Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Implementation of an optical integrated pressure sensor and experimental results (2002)
Siarkowski, Acácio Luiz; Bulla, Douglas Anderson Pereira; Morimoto, Nilton Itiro
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SIARKOWSKI, Acácio Luiz e BULLA, Douglas Anderson Pereira e MORIMOTO, Nilton Itiro. Implementation of an optical integrated pressure sensor and experimental results. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Siarkowski, A. L., Bulla, D. A. P., & Morimoto, N. I. (2002). Implementation of an optical integrated pressure sensor and experimental results. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Siarkowski AL, Bulla DAP, Morimoto NI. Implementation of an optical integrated pressure sensor and experimental results. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Siarkowski AL, Bulla DAP, Morimoto NI. Implementation of an optical integrated pressure sensor and experimental results. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
A simple analytical model of graded-channel SOI nMOSFET transconductance (2002)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A simple analytical model of graded-channel SOI nMOSFET transconductance. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2002). A simple analytical model of graded-channel SOI nMOSFET transconductance. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C) (2002)
Viana, Carlos Eduardo; Santos, J.L.R.; Morimoto, Nilton Itiro
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
VIANA, Carlos Eduardo e SANTOS, J.L.R. e MORIMOTO, Nilton Itiro. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Viana, C. E., Santos, J. L. R., & Morimoto, N. I. (2002). High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Effect of stencil alignment on the solder beading in SMT process (2002)
Silva, Flávio Sousa; Oka, Mauricio Massazumi
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, Flávio Sousa e OKA, Mauricio Massazumi. Effect of stencil alignment on the solder beading in SMT process. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Silva, F. S., & Oka, M. M. (2002). Effect of stencil alignment on the solder beading in SMT process. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Characterization of SF6 plasmas by RF electrical measurements (2002)
Pisani, Marcelo Bento; Verdonck, Patrick Bernard
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PISANI, Marcelo Bento e VERDONCK, Patrick Bernard. Characterization of SF6 plasmas by RF electrical measurements. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Pisani, M. B., & Verdonck, P. B. (2002). Characterization of SF6 plasmas by RF electrical measurements. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)
Hoashi, Paulo Tetsuo; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
HOASHI, Paulo Tetsuo e MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors (2002)
Gonçalves, Lucas Gonçalves Dias; Silva, Antônio Nélson Rodrigues da ; Alfano, C.F.; Santos, J. C.; Morimoto, Nilton Itiro
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GONÇALVES, Lucas Gonçalves Dias et al. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Gonçalves, L. G. D., Silva, A. N. R. da, Alfano, C. F., Santos, J. C., & Morimoto, N. I. (2002). Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Analog performance of graded-channel SOI NMOSFETS at low temperatures (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Analog performance of graded-channel SOI NMOSFETS at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2002). Analog performance of graded-channel SOI NMOSFETS at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Phosphorus implantation on near stoichiometric a-SIC:H films (2002)
Oliveira, A. R.; Paez Carreño, Marcelo Nelson
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, A. R. e PAEZ CARREÑO, Marcelo Nelson. Phosphorus implantation on near stoichiometric a-SIC:H films. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Oliveira, A. R., & Paez Carreño, M. N. (2002). Phosphorus implantation on near stoichiometric a-SIC:H films. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley et al. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Parte de monografia/livro
Highly conductive n-type MC-Si:H films deposited at very low temperature (2002)
Nardes, Alexandre Mantovani; Dirani, Ely Antonio Tadeu ; Andrade, Adnei Melges de ; Fonseca, Fernando Josepetti
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NARDES, Alexandre Mantovani et al. Highly conductive n-type MC-Si:H films deposited at very low temperature. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 23 nov. 2025.
APA
Nardes, A. M., Dirani, E. A. T., Andrade, A. M. de, & Fonseca, F. J. (2002). Highly conductive n-type MC-Si:H films deposited at very low temperature. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]
Vancouver
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 23 ]

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